IXFH24N80P This IXYS IXFH24N80P is an N-Channel power MOSFET with 800V drain-source breakdown voltage and 24A continuous drain current. It comes in a through-hole TO-247AD package.
Mfr Part #:

IXFH24N80P

Available from 2 distributors
Mfr Name: IXYS
IXYS
This IXYS IXFH24N80P is an N-Channel power MOSFET with 800V drain-source breakdown voltage and 24A continuous drain current. It comes in a through-hole TO-247AD package.
Total Stock: 1,653 pcs
$ Price Range: $8.72 - $14.84

IXFH24N80P Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,638 pcs
1638 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
15 pcs
15 pcs On Request 1 On Request On Request 21+ On Request On Request

IXFH24N80P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFH24N80P Description

Short technical summary and product information.

The IXFH24N80P is a high-voltage N-channel power MOSFET manufactured by IXYS. It features a drain-source breakdown voltage of 800 V and a continuous drain current of 24 A (at Tc). The device exhibits a low on-resistance of 400 mOhm maximum at Vgs=10V and Id=12A. With a maximum gate charge of 105 nC and input capacitance of 7200 pF, it is suitable for high-frequency switching applications.

 

This MOSFET comes in a through-hole TO-247-3 package (TO-247AD). It has a maximum power dissipation of 650 W and operates over a junction temperature range of -55°C to 150°C. The device requires a gate drive voltage of 10 V for optimal Rds(on) performance. The gate threshold voltage is 5 V maximum at Id=4mA, and the maximum gate-source voltage is ±30 V.

 

The IXFH24N80P is ideal for applications such as power supplies, DC-DC converters, motor control, and other high-voltage switching circuits. Its rugged design and high current handling make it a reliable choice for demanding power electronics systems.

IXFH24N80P Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: MOSFET N-CH 800V 24A TO247AD
Subcategory: Single MOSFET

IXFH24N80P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH24N80P Estimated Pricing

Qty Low High
1+ $14.84 $14.84
10+ $11.27 $11.27
120+ $9.43 $9.43
510+ $8.72 $8.72

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH24N80P Features

  • 800V drain-source breakdown voltage.
  • 24A continuous drain current rating.
  • 400 mOhm maximum on-resistance.
  • TO-247AD through-hole package.
  • N-channel MOSFET technology.

IXFH24N80P Applications

  • Suitable for high-voltage switching circuits.
  • Used in power supply designs.
  • Ideal for motor control applications.
  • Applicable in DC-DC converters.

IXFH24N80P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFH24N80P?

The drain-source voltage rating is 800 V.

What is the package type of the IXFH24N80P?

It comes in a TO-247-3 through-hole package (TO-247AD).

What is the operating temperature range of the IXFH24N80P?

The operating temperature range is -55°C to 150°C (junction).

Is the IXFH24N80P RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the maximum power dissipation of the IXFH24N80P?

The maximum power dissipation is 650 W at Tc.

What is the gate charge of the IXFH24N80P?

The maximum gate charge is 105 nC at Vgs=10V.

What is the input capacitance of the IXFH24N80P?

The maximum input capacitance is 7200 pF at Vds=25V.

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