| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,628 pcs
|
1628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon BSZ900N20NS3GATMA1 is an N-channel power MOSFET from the OptiMOS 3 family, optimized for dc-dc conversion applications. It features a drain-source breakdown voltage of 200V and a continuous drain current of 15.2A at 25°C (10.7A at 100°C). The device offers a low typical on-resistance of 77mΩ (90mΩ max) at Vgs=10V, ensuring high efficiency in power switching.
Key electrical characteristics include a gate threshold voltage range of 2V to 4V, input capacitance of 690pF typical, and total gate charge of 8.7nC typical. The MOSFET can handle pulsed drain currents up to 61A and single-pulse avalanche energy of 100mJ. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 62.5W at case temperature 25°C.
The device is housed in a PG-TSDSON-8 surface-mount package (8-PowerTDFN) with a maximum junction-to-case thermal resistance of 2.5°C/W. It is RoHS compliant and halogen-free according to IEC61249-2-21, with Pb-free lead plating. The part is qualified according to JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.22 | $2.22 |
| 10+ | $1.40 | $1.40 |
| 100+ | $0.96 | $0.96 |
| 500+ | $0.76 | $0.76 |
| 1,000+ | $0.68 | $0.68 |
| 2,500+ | $0.66 | $0.66 |
| 5,000+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 200V minimum at Vgs=0V, Id=1mA.
It is available in a PG-TSDSON-8 surface-mount package (8-PowerTDFN).
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet states it is RoHS compliant with Pb-free lead plating.
The typical drain-source on-resistance is 77mΩ at Vgs=10V, Id=7.6A, with a maximum of 90mΩ.
The gate threshold voltage ranges from 2V minimum to 4V maximum, with a typical value of 3V at Id=30µA.
The total gate charge is 8.7nC typical and 11.6nC maximum at Vdd=100V, Vgs=10V, Id=7.6A.