| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,650 pcs
|
1650 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N6796 is a high-reliability N-Channel Power MOSFET manufactured by Microsemi Corporation. This component is designed for applications requiring robust performance, featuring a maximum drain-to-source voltage (Vdss) of 100V and a continuous current rating of 8A (Tc).
Key electrical characteristics include a maximum on-resistance (Rds On) of 195mOhm at 8A and 10V Vgs, and a gate-to-source threshold voltage (Vgs(th)) of 4V at 250µA. The device operates within a temperature range of -55°C to 150°C (TJ).
Packaged in a TO-205AD, TO-39-3 Metal Can (TO-205AF), this MOSFET is designed for through-hole mounting. Its power dissipation is rated at 800mW (Ta) and 25W (Tc), making it suitable for various power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the JANTX2N6796 is 100V.
The JANTX2N6796 has a continuous current rating of 8A.
The maximum on-resistance (Rds On) for the JANTX2N6796 is 195mOhm at 8A and 10V.
The JANTX2N6796 operates between -55°C and 150°C (TJ).
The JANTX2N6796 is supplied in a TO-205AD, TO-39-3 Metal Can (TO-205AF) package.
The JANTX2N6796 is designed for through-hole mounting.