| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCB125N65S3 is an N-Channel power MOSFET from On Semiconductor, part of the SUPERFET III Easy Drive family. It utilizes charge balance super-junction technology to achieve low on-resistance and low gate charge, minimizing conduction losses and enabling efficient switching.
Key electrical specifications include a 650V drain-source breakdown voltage, 24A continuous drain current at 25°C, and a maximum on-resistance of 125mΩ at 10V gate drive. The device offers a typical gate charge of 46nC and input capacitance of 1940pF, supporting fast switching in power conversion circuits.
The MOSFET is housed in a surface-mount D²PAK-3 (TO-263-3) package and is rated for operation from -55°C to 150°C junction temperature. It is 100% avalanche tested and suitable for telecom, server, industrial power supplies, UPS, and solar applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.70 | $6.70 |
| 10+ | $4.50 | $4.50 |
| 100+ | $3.25 | $3.25 |
| 500+ | $2.97 | $2.97 |
| 800+ | $2.86 | $2.86 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650 V.
The maximum continuous drain current is 24 A at a case temperature of 25°C, and 15 A at 100°C.
The maximum on-resistance is 125 mΩ at a drain current of 12 A and gate-source voltage of 10 V. Typical on-resistance is 105 mΩ.
It is available in a surface-mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, also referred to as D²PAK-3.
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet states the device is Pb-Free and RoHS Compliant.
The typical gate charge is 46 nC at a gate-source voltage of 10 V.