| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
This Toshiba TK160F10N1L,LXGQ is an N-Channel MOSFET with a drain-source voltage (Vdss) of 100V and a continuous drain current of 160A. It features a low on-resistance of 2.4mOhm at 80A and 10V.
The MOSFET has a maximum power dissipation of 375W (Tc) and an operating temperature range of -55°C to 175°C. It utilizes Metal Oxide Semiconductor technology and has a gate charge of 122nC and input capacitance of 10100pF.
Packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, this device is designed for surface mounting. The supplier device package is TO-220SM(W).
Compliance includes RoHS3, MSL 1, and REACH Unaffected. This component is suitable for various power switching applications requiring high current and voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 160A.
The maximum on-resistance is 2.4mOhm at 80A and 10V.
The operating temperature range is -55°C to 175°C.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
Yes, it is RoHS3 Compliant.