FQD13N10TM N-Channel MOSFET with 100V drain-source breakdown voltage and 10A continuous drain current. Surface mount package in TO-252 (DPAK).
Mfr Part #:

FQD13N10TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source breakdown voltage and 10A continuous drain current. Surface mount package in TO-252 (DPAK).
✓ Total Stock: 1,670 pcs

FQD13N10TM Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,472 pcs
1472 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
198 pcs
198 pcs On Request 1 On Request On Request On Request On Request On Request

FQD13N10TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD13N10TM Description

Short technical summary and product information.

The FQD13N10TM is an N-Channel MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 100V and a continuous drain current of 10A at Tc=25°C. The device has a maximum on-resistance of 180 mOhm at Vgs=10V and Id=5A, making it suitable for switching applications. Gate charge is 16 nC at Vgs=10V, and input capacitance is 450 pF at Vds=25V. The threshold voltage is 4V at Id=250µA. Maximum power dissipation is 2.5W at ambient temperature and 40W at case temperature. The operating junction temperature range is -55°C to 150°C. The device is offered in a surface mount TO-252-3 (DPak) package, also known as SC-63, with supplier device package TO-252AA. This MOSFET uses a standard gate drive voltage of 10V for optimal on-resistance. The low gate charge enables efficient high-frequency switching. The DPAK package provides good thermal performance for moderate power levels, making it suitable for power supply, DC-DC converter, and load switching applications.

FQD13N10TM Quick Information

Product Type: MOSFET
Canonical Name: FQD13N10TM N-Channel MOSFET
Subcategory: Single MOSFET

FQD13N10TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD13N10TM Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 10A.
  • Low on-resistance of 180 mOhm at 10V gate drive.
  • Surface mount DPAK package for easy assembly.
  • Wide operating temperature range from -55°C to 150°C.

FQD13N10TM Applications

  • Used in power supply switching circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for load switching applications.
  • Applicable in motor control circuits.

FQD13N10TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQD13N10TM?

The drain-source breakdown voltage is 100V.

What is the continuous drain current rating?

The continuous drain current is 10A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 180 mOhm at Vgs=10V and Id=5A.

What is the gate charge of the FQD13N10TM?

The maximum gate charge is 16 nC at Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FQD13N10TM available in?

It is available in a surface mount TO-252-3 (DPak, SC-63) package with supplier device package TO-252AA.

Is the FQD13N10TM RoHS compliant?

It is listed as RoHS3 compliant, but this information is unverified.

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