| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,628 pcs
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1628 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The STMicroelectronics STU3LN80K5 is an N-Channel MOSFET designed for power applications. It features a high drain-source breakdown voltage of 800V and a continuous drain current capability of 2A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 3.25 Ohms at 1A and 10V gate drive voltage. The device also has a gate charge (Qg) of 2.63 nC at 10V and an input capacitance (Ciss) of 102 pF at 100V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 45W (Tc). It is packaged in a TO-251-3 Short Leads, IPak, TO-251AA package and is designed for through-hole mounting.
The STU3LN80K5 belongs to the MDmesh™ K5 series and is suitable for various power switching applications where high voltage and moderate current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 800V.
The STU3LN80K5 is available in a TO-251-3 IPAK through-hole package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current is 2A at 25°C.
The maximum on-resistance is 3.25Ω at 1A and 10V gate drive.
The maximum gate charge is 2.63nC at 10V.
The maximum input capacitance is 102pF at 100V.