Transistors - FETs, MOSFETs - Single DistyParts

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Transistors - FETs, MOSFETs - Single facilitate the control of electrical signals in various electronic applications. Key attributes include Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). These components are essential for industrial power management and new product design.

What are Transistors - FETs, MOSFETs - Single ?

Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.

Part & Mfr

Total Stock

Pricing & RFQ

Current

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On, Min Rds On)

FET Feature

FET Type

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Mounting Type

Operating Temperature

Power Dissipation (Max)

Rds On (Max) @ Id, Vgs

Supplier Device Package

Technology

Vgs (Max)

Vgs(th) (Max) @ Id

IRFS3107-7PPBF

Infineon Technologies

Price on request

240A (Tc)

75 V

10V

N-Channel

240 nC @ 10 V

9200 pF @ 50 V

Surface Mount

-55°C ~ 175°C (TJ)

370W (Tc)

2.6mOhm @ 160A, 10V

D2PAK (7-Lead)

MOSFET (Metal Oxide)

±20V

4V @ 250µA

IRFPG40

Vishay

Price on request

4.3A (Tc)

1000 V

10V

N-Channel

120 nC @ 10 V

1600 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

150W (Tc)

3.5Ohm @ 2.6A, 10V

TO-247AC

MOSFET (Metal Oxide)

±20V

4V @ 250µA

SI7423DN-T1-E3

Vishay

From Braun Electronic Components

Price on request

7.4A (Ta)

30 V

4.5V, 10V

P-Channel

56 nC @ 10 V

Surface Mount

-55°C ~ 150°C (TJ)

1.5W (Ta)

18mOhm @ 11.7A, 10V

PowerPAK® 1212-8

MOSFET (Metal Oxide)

±20V

3V @ 250µA

IRF250P224

Infineon Technologies

Price on request

96A (Tc)

250 V

10V

N-Channel

203 nC @ 10 V

9915 pF @ 50 V

Through Hole

-55°C ~ 175°C (TJ)

313W (Tc)

12mOhm @ 58A, 10V

TO-247AC

MOSFET (Metal Oxide)

±20V

4V @ 270µA

CSD18563Q5AT

Texas Instruments

Price on request

100A (Ta)

60 V

4.5V, 10V

N-Channel

20 nC @ 10 V

1500 pF @ 30 V

Surface Mount

-55°C ~ 150°C (TJ)

3.2W (Ta), 116W (Tc)

6.8mOhm @ 18A, 10V

8-VSONP (5x6)

MOSFET (Metal Oxide)

±20V

2.4V @ 250µA

SI1304BDL-T1-E3

Vishay

Across 2 distributors

Distributor	Stock	MOQ	Country
Fe Components	64	-	-
Speed Components Ltd	32	-	-

Price on request

Distributor	Stock	MOQ	Country
Fe Components	64	-	-
Speed Components Ltd	32	-	-

900mA (Tc)

30 V

2.5V, 4.5V

N-Channel

2.7 nC @ 4.5 V

100 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

340mW (Ta), 370mW (Tc)

270mOhm @ 900mA, 4.5V

SC-70-3

MOSFET (Metal Oxide)

±12V

1.3V @ 250µA

RFD3055LESM9A

On Semiconductor

Across 2 distributors

Distributor	Stock	MOQ	Country
ADI/AAR OEM Supply	56	-	-
MW.FEP S.p.A.	40	-	-

Price on request

Distributor	Stock	MOQ	Country
ADI/AAR OEM Supply	56	-	-
MW.FEP S.p.A.	40	-	-

11A (Tc)

60 V

N-Channel

11.3 nC @ 10 V

350 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

38W (Tc)

107mOhm @ 8A, 5V

TO-252AA

MOSFET (Metal Oxide)

±16V

3V @ 250µA

IRFS4010PBF

Infineon Technologies

Price on request

180A (Tc)

100 V

10V

N-Channel

215 nC @ 10 V

9575 pF @ 50 V

Surface Mount

-55°C ~ 175°C (TJ)

375W (Tc)

4.7mOhm @ 106A, 10V

D2PAK

MOSFET (Metal Oxide)

±20V

4V @ 250µA

SI5468DC-T1-GE3

Vishay

From Bristol Electronics

Price on request

6A (Tc)

30 V

4.5V, 10V

N-Channel

12 nC @ 10 V

435 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2.3W (Ta), 5.7W (Tc)

28mOhm @ 6.8A, 10V

1206-8 ChipFET

MOSFET (Metal Oxide)

±20V

2.5V @ 250µA

FDP3672

On Semiconductor

From Speed Components Ltd

Price on request

5.9A (Ta), 41A (Tc)

105 V

6V, 10V

N-Channel

37 nC @ 10 V

1670 pF @ 25 V

Through Hole

-55°C ~ 175°C (TJ)

135W (Tc)

33mOhm @ 41A, 10V

TO-220-3

MOSFET (Metal Oxide)

±20V

4V @ 250µA

PJA3434_R1_00001

PANJIT

Price on request

750mA (Ta)

20 V

1.2V, 4.5V

N-Channel

1.4 nC @ 4.5 V

67 pF @ 10 V

Surface Mount

-55°C ~ 150°C (TJ)

500mW (Ta)

400mOhm @ 600mA, 4.5V

SOT-23

MOSFET (Metal Oxide)

±10V

1V @ 250µA

AUIRFR8401

Infineon Technologies

From Bristol Electronics

Price on request

100A (Tc)

40 V

10V

N-Channel

63 nC @ 10 V

2200 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

79W (Tc)

4.25mOhm @ 60A, 10V

D-Pak

MOSFET (Metal Oxide)

±20V

3.9V @ 50µA

IRF8113TRPBF

Infineon Technologies

Price on request

17.2A (Ta)

30 V

4.5V, 10V

N-Channel

36 nC @ 4.5 V

2910 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2.5W (Ta)

5.6mOhm @ 17.2A, 10V

8-SO

MOSFET (Metal Oxide)

±20V

2.2V @ 250µA

IRL510S

Vishay

Price on request

5.6A (Tc)

100 V

4V, 5V

N-Channel

6.1 nC @ 5 V

250 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

3.7W (Ta), 43W (Tc)

540mOhm @ 3.4A, 5V

D²PAK (TO-263)

MOSFET (Metal Oxide)

±10V

2V @ 250µA

IRFD210

Vishay

Price on request

600mA (Ta)

200 V

10V

N-Channel

8.2 nC @ 10 V

140 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

1W (Ta)

1.5Ohm @ 360mA, 10V

4-HVMDIP

MOSFET (Metal Oxide)

±20V

4V @ 250µA

IRF8707TRPBF

Infineon Technologies

From Innova Technologies

Price on request

11A (Ta)

30 V

4.5V, 10V

N-Channel

9.3 nC @ 4.5 V

760 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2.5W (Ta)

11.9mOhm @ 11A, 10V

8-SO

MOSFET (Metal Oxide)

±20V

2.35V @ 25µA

SUM70060E-GE3

Vishay

Price on request

131A (Tc)

100 V

7.5V, 10V

N-Channel

81 nC @ 10 V

3330 pF @ 50 V

Surface Mount

-55°C ~ 175°C (TJ)

375W (Tc)

5.6mOhm @ 30A, 10V

TO-263 (D²Pak)

MOSFET (Metal Oxide)

±20V

4V @ 250µA

VN0808L-G

Microchip Technology

From Braun Electronic Components

Price on request

300mA (Tj)

80 V

10V

N-Channel

50 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

1W (Tc)

4Ohm @ 1A, 10V

TO-92-3

MOSFET (Metal Oxide)

±30V

2V @ 1mA

SI2316BDS-T1-GE3

Vishay

Across 2 distributors

Distributor	Stock	MOQ	Country
ADI/AAR OEM Supply	16	-	-
MW.FEP S.p.A.	75	-	-

Price on request

Distributor	Stock	MOQ	Country
ADI/AAR OEM Supply	16	-	-
MW.FEP S.p.A.	75	-	-

4.5A (Tc)

30 V

4.5V, 10V

N-Channel

9.6 nC @ 10 V

350 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

1.25W (Ta), 1.66W (Tc)

50mOhm @ 3.9A, 10V

SOT-23-3 (TO-236)

MOSFET (Metal Oxide)

±20V

3V @ 250µA

SCT3080ALGC11

ROHM Semiconductor

From Bristol Electronics

Price on request

30A (Tc)

650 V

18V

N-Channel

48 nC @ 18 V

571 pF @ 500 V

Through Hole

175°C (TJ)

134W (Tc)

104mOhm @ 10A, 18V

TO-247N

SiCFET (Silicon Carbide)

+22V, -4V

5.6V @ 5mA

IRFD110

Vishay

Price on request

1A (Ta)

100 V

10V

N-Channel

8.3 nC @ 10 V

180 pF @ 25 V

Through Hole

-55°C ~ 175°C (TJ)

1.3W (Ta)

540mOhm @ 600mA, 10V

4-HVMDIP

MOSFET (Metal Oxide)

±20V

4V @ 250µA

IRFD220

Vishay

Price on request

800mA (Ta)

200 V

10V

N-Channel

14 nC @ 10 V

260 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

1W (Ta)

800mOhm @ 480mA, 10V

4-HVMDIP

MOSFET (Metal Oxide)

±20V

4V @ 250µA

STW36N55M5

STMicroelectronics

Price on request

33A (Tc)

550 V

10V

N-Channel

62 nC @ 10 V

2950 pF @ 100 V

Through Hole

150°C (TJ)

190W (Tc)

80mOhm @ 16.5A, 10V

TO-247-3

MOSFET (Metal Oxide)

±25V

5V @ 250µA

MSC060SMA070B

Microchip Technology

Price on request

39A (Tc)

700 V

20V

N-Channel

56 nC @ 20 V

1175 pF @ 700 V

Through Hole

-55°C ~ 175°C (TJ)

143W (Tc)

75mOhm @ 20A, 20V

TO-247-3

SiCFET (Silicon Carbide)

+23V, -10V

2.4V @ 1mA

IRL3803STRRPBF

Infineon Technologies

Price on request

140A (Tc)

30 V

4.5V, 10V

N-Channel

140 nC @ 4.5 V

5000 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

3.8W (Ta), 200W (Tc)

6mOhm @ 71A, 10V

D2PAK

MOSFET (Metal Oxide)

±16V

1V @ 250µA

TK40J20D,S1F(O

Toshiba

Price on request

40A (Ta)

200 V

10V

N-Channel

100 nC @ 10 V

4300 pF @ 100 V

Through Hole

150°C

260W (Tc)

44mOhm @ 20A, 10V

TO-3P(N)

MOSFET (Metal Oxide)

±20V

3.5V @ 1mA

2SJ668(TE16L1,NQ)

Toshiba

From Bristol Electronics

Price on request

5A (Ta)

60 V

4V, 10V

P-Channel

15 nC @ 10 V

700 pF @ 10 V

Surface Mount

150°C

20W (Tc)

170mOhm @ 2.5A, 10V

PW-MOLD

MOSFET (Metal Oxide)

±20V

2V @ 1mA

IRFIB7N50LPBF

Vishay

From Bristol Electronics

Price on request

6.8A (Tc)

500 V

10V

N-Channel

92 nC @ 10 V

2220 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

46W (Tc)

380mOhm @ 4.1A, 10V

TO-220-3

MOSFET (Metal Oxide)

±30V

5V @ 250µA

IRFS3206PBF

Infineon Technologies

Price on request

120A (Tc)

60 V

10V

N-Channel

170 nC @ 10 V

6540 pF @ 50 V

Surface Mount

-55°C ~ 175°C (TJ)

300W (Tc)

3mOhm @ 75A, 10V

D2PAK

MOSFET (Metal Oxide)

±20V

4V @ 150µA

IPP110N20N3GXKSA1

Infineon Technologies

Price on request

88A (Tc)

200 V

10V

N-Channel

87 nC @ 10 V

7100 pF @ 100 V

Through Hole

-55°C ~ 175°C (TJ)

300W (Tc)

11mOhm @ 88A, 10V

PG-TO220-3

MOSFET (Metal Oxide)

±20V

4V @ 270µA

STF16NM50N

STMicroelectronics

Price on request

15A (Tc)

500 V

10V

N-Channel

38 nC @ 10 V

1200 pF @ 50 V

Through Hole

150°C (TJ)

30W (Tc)

260mOhm @ 7.5A, 10V

TO-220FP

MOSFET (Metal Oxide)

±25V

4V @ 250µA

SUM23N15-73-E3

Vishay

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	30	1	-
Optech Co.,Limited	55	-	-

Price on request

Distributor	Stock	MOQ	Country
Braun Electronic Components	30	1	-
Optech Co.,Limited	55	-	-

23A (Tc)

150 V

6V, 10V

N-Channel

35 nC @ 10 V

1290 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

3.75W (Ta), 100W (Tc)

73mOhm @ 15A, 10V

TO-263 (D²Pak)

MOSFET (Metal Oxide)

±20V

4V @ 250µA

STD12NF06T4

STMicroelectronics

From Speed Components Ltd

Price on request

12A (Tc)

60 V

10V

N-Channel

12 nC @ 10 V

315 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

30W (Tc)

100mOhm @ 6A, 10V

DPAK

MOSFET (Metal Oxide)

±20V

4V @ 250µA

STU10N60M2

STMicroelectronics

Price on request

7.5A (Tc)

600 V

10V

N-Channel

13.5 nC @ 10 V

400 pF @ 100 V

Through Hole

-55°C ~ 150°C (TJ)

85W (Tc)

600mOhm @ 3A, 10V

TO-251 (IPAK)

MOSFET (Metal Oxide)

±25V

4V @ 250µA

IRF9630S

Vishay

Price on request

6.5A (Tc)

200 V

10V

P-Channel

29 nC @ 10 V

700 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

3W (Ta), 74W (Tc)

800mOhm @ 3.9A, 10V

D²PAK (TO-263)

MOSFET (Metal Oxide)

±20V

4V @ 250µA

STU10NM65N

STMicroelectronics

Price on request

9A (Tc)

650 V

10V

N-Channel

25 nC @ 10 V

850 pF @ 50 V

Through Hole

150°C (TJ)

90W (Tc)

480mOhm @ 4.5A, 10V

I-PAK

MOSFET (Metal Oxide)

±25V

4V @ 250µA

SIA443DJ-T1-GE3

Vishay

From Speed Components Ltd

Price on request

9A (Tc)

20 V

1.8V, 4.5V

P-Channel

25 nC @ 8 V

750 pF @ 10 V

Surface Mount

-55°C ~ 150°C (TJ)

3.3W (Ta), 15W (Tc)

45mOhm @ 4.7A, 4.5V

PowerPAK® SC-70-6

MOSFET (Metal Oxide)

±8V

1V @ 250µA

IPB031N08N5ATMA1

Infineon Technologies

Price on request

120A (Tc)

80 V

6V, 10V

N-Channel

87 nC @ 10 V

6240 pF @ 40 V

Surface Mount

-55°C ~ 175°C (TJ)

167W (Tc)

3.1mOhm @ 100A, 10V

PG-TO263-3

MOSFET (Metal Oxide)

±20V

3.8V @ 108µA

IRF640STRLPBF

Vishay

From Speed Components Ltd

Price on request

18A (Tc)

200 V

10V

N-Channel

70 nC @ 10 V

1300 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

3.1W (Ta), 130W (Tc)

180mOhm @ 11A, 10V

D²PAK (TO-263)

MOSFET (Metal Oxide)

±20V

4V @ 250µA

IRLL2705TRPBF

Infineon Technologies

Price on request

3.8A (Ta)

55 V

4V, 10V

N-Channel

48 nC @ 10 V

870 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

1W (Ta)

40mOhm @ 3.8A, 10V

SOT-223

MOSFET (Metal Oxide)

±16V

2V @ 250µA

SPB17N80C3ATMA1

Infineon Technologies

Price on request

17A (Tc)

800 V

10V

N-Channel

177 nC @ 10 V

2300 pF @ 100 V

Surface Mount

-55°C ~ 150°C (TJ)

227W (Tc)

290mOhm @ 11A, 10V

PG-TO263-3-2

MOSFET (Metal Oxide)

±20V

3.9V @ 1mA

ZVNL120GTA

Diodes Incorporated

From Bristol Electronics

Price on request

320mA (Ta)

200 V

3V, 5V

N-Channel

85 pF @ 25 V

Surface Mount

-55°C ~ 150°C (TJ)

2W (Ta)

10Ohm @ 250mA, 5V

SOT-223-3

MOSFET (Metal Oxide)

±20V

1.5V @ 1mA

IRLML2803TR

Infineon Technologies

Price on request

1.2A (Ta)

30 V

N-Channel

5 nC @ 10 V

85 pF @ 25 V

Surface Mount

250mOhm @ 910mA, 10V

Micro3/SOT-23

MOSFET (Metal Oxide)

1V @ 250µA

BSC882N03LS G

Infineon Technologies

Price on request

34 V

10V

N-Channel

3700 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

4.2mOhm @ 30A, 10V

PG-TDSON-8-6

MOSFET (Metal Oxide)

±20V

2.2V @ 250µA

SI2304DDS-T1-BE3

Vishay

From Bristol Electronics

Price on request

3.3A (Ta), 3.6A (Tc)

30 V

4.5V, 10V

N-Channel

6.7 nC @ 10 V

235 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

1.1W (Ta), 1.7W (Tc)

60mOhm @ 3.2A, 10V

SOT-23-3 (TO-236)

MOSFET (Metal Oxide)

±20V

2.2V @ 250µA

CSD17303Q5

Texas Instruments

From Bristol Electronics

Price on request

32A (Ta), 100A (Tc)

30 V

3V, 8V

N-Channel

23 nC @ 4.5 V

3420 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

3.2W (Ta)

2.4mOhm @ 25A, 8V

8-VSON-CLIP (5x6)

MOSFET (Metal Oxide)

+10V, -8V

1.6V @ 250µA

TK15A60D(STA4,Q,M)

Toshiba

Price on request

15A (Ta)

600 V

10V

N-Channel

45 nC @ 10 V

2600 pF @ 25 V

Through Hole

150°C (TJ)

50W (Tc)

370mOhm @ 7.5A, 10V

TO-220SIS

MOSFET (Metal Oxide)

±30V

4V @ 1mA

FQP5N60C

On Semiconductor

Price on request

4.5A (Tc)

600 V

10V

N-Channel

19 nC @ 10 V

670 pF @ 25 V

Through Hole

-55°C ~ 150°C (TJ)

100W (Tc)

2.5Ohm @ 2.25A, 10V

TO-220-3

MOSFET (Metal Oxide)

±30V

4V @ 250µA

CSD17309Q3

Texas Instruments

From Braun Electronic Components

Price on request

20A (Ta), 60A (Tc)

30 V

3V, 8V

N-Channel

10 nC @ 4.5 V

1440 pF @ 15 V

Surface Mount

-55°C ~ 150°C (TJ)

2.8W (Ta)

5.4mOhm @ 18A, 8V

8-VSON-CLIP (3.3x3.3)

MOSFET (Metal Oxide)

+10V, -8V

1.7V @ 250µA

SQJQ466E-T1_GE3

Vishay

Price on request

200A (Tc)

60 V

10V

N-Channel

180 nC @ 10 V

10210 pF @ 25 V

Surface Mount

-55°C ~ 175°C (TJ)

150W (Tc)

1.9mOhm @ 10A, 10V

PowerPAK® 8 x 8

MOSFET (Metal Oxide)

±20V

3.5V @ 250µA

Showing 7501-7550 of 41,316 products

About Transistors - FETs, MOSFETs - Single

Transistors - FETs, MOSFETs - Single are essential components in the realm of discrete semiconductor products, providing critical functionality in electronic circuits. These transistors are designed to handle various electrical parameters, making them suitable for applications ranging from industrial power management to new product design and prototyping.

When sourcing FETs and MOSFETs, it is crucial to compare key specifications such as Current, Drain to Source Voltage (Vdss), and Drive Voltage (Max Rds On, Min Rds On). Understanding these attributes will help ensure that the selected components meet the specific requirements of your application.

Applications for these transistors include production electronics assembly, maintenance and field replacement, as well as engineering evaluation and qualification. They are vital in ensuring reliable performance in various electronic systems.

Buyers should prioritize parametric filtering to reduce sourcing risk and confirm mechanical and electrical compatibility with existing design constraints. It is advisable to validate lifecycle status and explore alternate-source options before submitting a Request for Quotation (RFQ).

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