| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STO67N60M6 is a 600V, 34A N-Channel MOSFET from STMicroelectronics. It features a maximum drain-source voltage of 600V, continuous drain current of 34A at case temperature, and a low on-resistance of 54mOhm at 26A drain current and 10V gate voltage. The device offers a maximum input capacitance of 3400pF at 100V and a total gate charge of 72.5nC at 10V, enabling efficient switching in power conversion applications. The maximum power dissipation is 150W at case temperature. The gate threshold voltage is 4.75V maximum at 250µA. The MOSFET is suitable for use in switch-mode power supplies, adapters, and lighting. It is housed in a TOLL (TO-Leadless) package for surface-mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
34A at case temperature Tc.
54mOhm maximum at 26A drain current and 10V gate voltage.
72.5nC maximum at 10V gate voltage.
3400pF maximum at 100V drain-source voltage.
150W at case temperature.
4.75V maximum at 250µA drain current.