SUD50P04-23-E3
Vishay
The Vishay Dale SUD50P04-23-E3 is a P-Channel MOSFET with a 40V drain-source voltage. It is designed for surface mount applications in a TO-252 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,800 pcs
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1800 pcs | On Request | 1 | On Request | On Request | 1330+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUD50P04-23-GE3 is a P-Channel MOSFET designed for various power applications. It offers a drain-source voltage of 40V and can handle continuous currents of 8.2A when mounted on a PCB (Ta) or 20A when mounted on a heat sink (Tc).
Key electrical characteristics include a maximum on-resistance of 23mOhm at 15A and 10V gate drive, a gate charge of 65nC at 10V, and a gate threshold voltage of 2V at 250µA. The MOSFET operates within a temperature range of -55°C to 175°C (TJ).
This component is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
The SUD50P04-23-GE3 is suitable for applications requiring efficient power switching and control, such as power management circuits, load switching, and motor control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-252-3 (DPak, SC-63) surface mount.
-55°C to 175°C (junction).
23mOhm at 15A, 10V.
65nC at 10V gate drive.
20A at case temperature (Tc), 8.2A at ambient (Ta).
45.4W at case temperature (Tc), 3.1W at ambient (Ta).