| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,758 pcs
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1758 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR420BTM is an N-Channel enhancement mode power MOSFET designed for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It features a drain-source breakdown voltage of 500V and a continuous drain current of 2.3A at 25°C (1.5A at 100°C). On-resistance is typically 2.6 Ohm maximum at Vgs=10V and Id=1.15A. Gate charge is 18nC maximum (14nC typical) at Vgs=10V, enabling fast switching. Input capacitance is 610pF maximum at Vds=25V. The device is 100% avalanche tested with a single pulsed avalanche energy rating of 200mJ. Peak diode recovery dv/dt is 5.5 V/ns.
The MOSFET is offered in a surface-mount DPAK (TO-252AA) package, which is also known as TO-252-3 or SC-63. It has a maximum power dissipation of 41W at case temperature 25°C and 2.5W at ambient temperature when mounted on a PCB. Junction-to-case thermal resistance is 3.05°C/W. Operating temperature range is -55°C to 150°C. Storage temperature range is the same. The part is listed as RoHS3 compliant and REACH unaffected, though these claims are unverified.
The minimum drain-source breakdown voltage is 500 V.
The maximum continuous drain current is 2.3 A at a case temperature of 25°C.
It is available in a surface-mount TO-252-3 (DPak, SC-63) package, with a supplier device package of TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 2.6 Ohm at Vgs=10V and Id=1.15A.
The part is listed as RoHS3 Compliant, but this is unverified and has low confidence. It is recommended to obtain an official compliance document from the manufacturer.
The maximum gate charge is 18 nC at Vgs=10V, with a typical value of 14 nC.