| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,760 pcs
|
1760 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQP17N08L is an N-Channel enhancement mode power MOSFET from onsemi's QFET family, originally designed by Fairchild Semiconductor. It is rated for a maximum drain-source voltage of 80V and continuous drain current of 16.5A at 25°C case temperature. The device features a low on-resistance of 100mΩ at Vgs=10V and Id=8.25A, and a typical gate charge of 8.8nC, enabling efficient switching in low-voltage applications. The MOSFET is 100% avalanche tested with a single pulse avalanche energy rating of 100mJ. It is housed in a standard TO-220-3 through-hole package, suitable for power dissipation up to 65W at 25°C case temperature. The operating junction temperature range is -55°C to 175°C. Typical applications include DC/DC converters, DC motor control, and automotive systems.
The maximum drain-source voltage (Vdss) is 80V at Tc=25°C.
The continuous drain current (Id) is 16.5A at Tc=25°C.
The maximum drain-source on-resistance (Rds(on)) is 100mΩ at Vgs=10V and Id=8.25A.
It is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
It is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.
The maximum gate threshold voltage (Vgs(th)) is 2V at Id=250µA.