| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,543 pcs
|
1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
213 pcs
|
213 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7315DN-T1-GE3 is a P-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vds) of 150V and a maximum continuous drain current (Id) of 8.9A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 315mOhm at 2.4A and 10V Vgs. The gate charge (Qg) is typically 15.4nC. The MOSFET operates within a junction temperature range of -50°C to 150°C.
This device utilizes TrenchFET® technology and comes in a compact PowerPAK® 1212-8 package, suitable for surface mounting. Applications include active clamp circuits in DC/DC power supplies and high-side switching for lighting.
Absolute maximum ratings include a gate-source voltage (Vgs) of ±30V and a pulsed drain current (Idm) of -10A. Power dissipation is rated at 52W at 25°C case temperature and 3.8W at 25°C ambient temperature when surface mounted on an FR4 board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is -150V.
This MOSFET comes in a PowerPAK® 1212-8 surface mount package.
The operating junction and storage temperature range is -50°C to 150°C.
The continuous drain current is -8.9A at TC = 25°C and -7.1A at TC = 70°C.
The maximum on-resistance is 0.315Ω at VGS = -10V and 0.350Ω at VGS = -6V.
The maximum gate charge is 30nC at 10V, with a typical value of 15.4nC.
The maximum power dissipation is 52W at TC = 25°C and 33W at TC = 70°C.