| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,530 pcs
|
1530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
218 pcs
|
218 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVTFS6H850NTAG is an N-Channel MOSFET from ON Semiconductor, designed for efficient power management. It offers a Drain-to-Source Voltage (Vdss) of 80V and a low on-resistance of 9.5mOhm at a gate-source voltage of 10V and drain current of 10A.
This MOSFET can handle a continuous drain current of up to 68A at a case temperature of 25°C and 3.2W of power dissipation at an ambient temperature of 25°C. It operates within a wide temperature range of -55°C to 175°C.
The device is housed in a compact 8-WDFN (3.3x3.3 mm) surface-mount package, making it suitable for space-constrained designs. Its features include low conduction losses and low capacitance, contributing to overall system efficiency. The NVTFS6H850NTAG is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80V.
The Rds On (Max) is 9.5mOhm at a drain current of 10A and gate-source voltage of 10V.
The continuous drain current is 68A at a case temperature of 25°C and 11A at an ambient temperature of 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
The NVTFS6H850NTAG is in an 8-PowerWDFN package, specifically an 8-WDFN (3.3x3.3) surface mount type.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.