FDPF7N50F N-Channel MOSFET rated for 500V drain-source voltage and 6A continuous drain current. Features a maximum on-resistance of 1.15Ω at Vgs=10V.
Mfr Part #:

FDPF7N50F

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 500V drain-source voltage and 6A continuous drain current. Features a maximum on-resistance of 1.15Ω at Vgs=10V.
✓ Total Stock: 1,756 pcs
$ Price Range: $1.12

FDPF7N50F Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,756 pcs
1756 pcs On Request 1 On Request On Request 11+ On Request On Request

FDPF7N50F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDPF7N50F Description

Short technical summary and product information.

The FDPF7N50F is an N-Channel enhancement mode power MOSFET from On Semiconductor's UniFET series. It is designed for high-efficiency switching applications with a maximum drain-source voltage of 500V and continuous drain current of 6A at 25°C case temperature. The device offers a typical on-resistance of 0.95Ω and a maximum of 1.15Ω at Vgs=10V and Id=3A.

 

This MOSFET features a gate threshold voltage range of 3V to 5V and a maximum gate-source voltage of ±30V. It is capable of handling pulsed drain currents up to 24A and has a maximum power dissipation of 38.5W at 25°C case temperature. The device is housed in a TO-220F (full-pack) package, which provides electrical isolation between the mounting surface and the die.

 

The FDPF7N50F is suitable for use in switching mode power supplies and active power factor correction circuits. It is 100% avalanche tested and offers improved dv/dt capability. The device is RoHS compliant.

FDPF7N50F Quick Information

Product Type: MOSFET
Series: FDPF7N50F
Canonical Name: FDPF7N50F N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FDPF7N50F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPF7N50F Estimated Pricing

Qty Low High
267+ $1.12 $1.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF7N50F Features

  • N-Channel MOSFET rated for 500V drain-source voltage.
  • Continuous drain current of 6A at 25°C.
  • Maximum on-resistance of 1.15Ω at Vgs=10V.
  • TO-220F full-pack package for electrical isolation.
  • RoHS compliant and 100% avalanche tested.

FDPF7N50F Applications

  • Ideal for switching mode power supplies.
  • Used in active power factor correction circuits.
  • Suitable for high-voltage DC-DC converters.
  • Applicable in motor control and lighting systems.

FDPF7N50F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDPF7N50F?

The maximum drain-source voltage is 500V.

What is the continuous drain current rating?

The continuous drain current is 6A at a case temperature of 25°C.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance is 1.15Ω at Vgs=10V and Id=3A.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 3V to 5V at Vds=Vgs and Id=250µA.

What package type is the FDPF7N50F available in?

The FDPF7N50F is available in a TO-220F (full-pack) package.

Is the FDPF7N50F RoHS compliant?

Yes, the FDPF7N50F is RoHS compliant.

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