| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF3415S is an N-Channel enhancement-mode power MOSFET designed for high-efficiency power switching applications. It features a drain-to-source voltage rating of 150V and a continuous drain current of 43A at case temperature. The device offers a low on-resistance of 42mOhm maximum at 22A and 10V gate drive.
This MOSFET uses standard gate drive voltages and exhibits a maximum gate charge of 200nC at 10V, enabling fast switching. The input capacitance is 2400pF at 25V drain bias. The threshold voltage is 4V maximum at 250µA drain current.
The device is housed in a D2PAK surface mount package (TO-263-3), suitable for automated assembly. Operating junction temperature range is -55°C to 175°C. Power dissipation is 200W at case temperature 25°C and 3.8W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 50+ | $3.55 | $3.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
43A at case temperature.
42 milliohms maximum at 22A drain current and 10V gate drive.
D2PAK (TO-263-3) surface mount package.
-55°C to 175°C (junction).