| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Medical Grade | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Tape & Reel | |
| Technology |
The FQA7N80C-F109 is an N-Channel power MOSFET built with QFET technology from On Semiconductor. It offers a drain-source voltage rating of 800V and a continuous drain current of 7A, with a maximum on-resistance of 1.9 Ohm. This device is designed for high-voltage switching applications such as power supplies and inverters. It is packaged in TO-3P-3 and TO-247-3 cases, suitable for through-hole mounting. The part is RoHS3 compliant, MSL 1 (unlimited), and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 480+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
7A.
1.9 Ohm maximum.
N-Channel.
QFET.
TO-3P-3 and TO-247-3.
Yes, RoHS3 Compliant.