IXFH26N50P3 N-Channel MOSFET from IXYS with 500V drain-source voltage and 26A continuous drain current. Features 230mOhm on-resistance and TO-247AD through-hole package.
Mfr Part #:

IXFH26N50P3

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel MOSFET from IXYS with 500V drain-source voltage and 26A continuous drain current. Features 230mOhm on-resistance and TO-247AD through-hole package.
Total Stock: 1,800 pcs
$ Price Range: $5.34 - $10.70

IXFH26N50P3 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,800 pcs
1800 pcs On Request 1 On Request On Request On Request On Request On Request

IXFH26N50P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFH26N50P3 Description

Short technical summary and product information.

The IXFH26N50P3 is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-voltage switching applications with a maximum drain-source voltage of 500V and continuous drain current of 26A at case temperature. The device features a low on-resistance of 230mOhm at 13A gate drive of 10V, ensuring efficient power conversion. With a gate charge of 42nC and input capacitance of 2220pF, it is suitable for moderate frequency switching. The MOSFET is housed in a TO-247AD (TO-247-3) through-hole package, providing robust thermal performance with a maximum power dissipation of 500W. The operating junction temperature range is -55°C to 150°C. This component is commonly used in power supplies, motor drives, and inverters where high voltage and current handling are required.

IXFH26N50P3 Quick Information

Product Type: N-Channel MOSFET
Series: Polar3 HiPerFET
Canonical Name: IXFH26N50P3 N-Channel MOSFET 500V 26A TO-247AD
Subcategory: Single MOSFET

IXFH26N50P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH26N50P3 Estimated Pricing

Qty Low High
1+ $10.70 $10.70
10+ $6.34 $6.34
120+ $5.37 $5.37
510+ $5.34 $5.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH26N50P3 Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • Continuous drain current rating of 26A.
  • Low on-resistance of 230mOhm at 10V gate drive.
  • TO-247AD through-hole package for easy mounting.
  • Operating temperature range from -55°C to 150°C.

IXFH26N50P3 Applications

  • Used in high-voltage power supply circuits.
  • Ideal for motor drive and inverter applications.
  • Suitable for DC-DC converter designs.
  • Applied in power factor correction stages.

IXFH26N50P3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IXFH26N50P3?

500V.

What package is the IXFH26N50P3 available in?

TO-247-3 (TO-247AD).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the IXFH26N50P3 RoHS compliant?

RoHS3 compliant (unverified).

What is the continuous drain current rating?

26A at case temperature.

What is the on-resistance of the IXFH26N50P3?

230mOhm maximum at 13A and 10V gate drive.

What is the gate charge of this MOSFET?

42nC at 10V gate-source voltage.

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