| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH26N50P3 is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-voltage switching applications with a maximum drain-source voltage of 500V and continuous drain current of 26A at case temperature. The device features a low on-resistance of 230mOhm at 13A gate drive of 10V, ensuring efficient power conversion. With a gate charge of 42nC and input capacitance of 2220pF, it is suitable for moderate frequency switching. The MOSFET is housed in a TO-247AD (TO-247-3) through-hole package, providing robust thermal performance with a maximum power dissipation of 500W. The operating junction temperature range is -55°C to 150°C. This component is commonly used in power supplies, motor drives, and inverters where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.70 | $10.70 |
| 10+ | $6.34 | $6.34 |
| 120+ | $5.37 | $5.37 |
| 510+ | $5.34 | $5.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-247-3 (TO-247AD).
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
26A at case temperature.
230mOhm maximum at 13A and 10V gate drive.
42nC at 10V gate-source voltage.