2SK4177-DL-1E N-Channel Power MOSFET rated for 1500V drain-to-source voltage and 2A continuous drain current. Features a typical on-resistance of 10Ω and is housed in a surface-mount TO-263-2L package.
Mfr Part #:

2SK4177-DL-1E

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET rated for 1500V drain-to-source voltage and 2A continuous drain current. Features a typical on-resistance of 10Ω and is housed in a surface-mount TO-263-2L package.
✓ Total Stock: 1,762 pcs

2SK4177-DL-1E Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,712 pcs
1712 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
50 pcs
50 pcs On Request 1 On Request On Request 18+ On Request On Request

2SK4177-DL-1E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)

2SK4177-DL-1E Description

Short technical summary and product information.

The 2SK4177-DL-1E is an N-Channel Power MOSFET from On Semiconductor designed for high-voltage switching applications. It features a drain-to-source voltage rating of 1500V and a continuous drain current of 2A, with a pulse current capability of 4A. The device offers a typical static drain-to-source on-state resistance of 10Ω, ensuring efficient power handling.

 

This MOSFET is built with MOSFET (Metal Oxide) technology and supports a 10V gate drive voltage. It provides a typical input capacitance of 380pF and a total gate charge of 37.5nC, enabling moderate switching speeds. The device is rated for a maximum power dissipation of 80W at a case temperature of 25°C and can operate at a maximum channel temperature of 150°C.

 

The 2SK4177-DL-1E is supplied in a surface-mount TO-263-2L package, also known as D²Pak, which is suitable for automated assembly. It is packaged in tape and reel with a minimum packing quantity of 800 pieces per reel. The part is lead-free and RoHS3 compliant.

2SK4177-DL-1E Quick Information

Product Type: Power MOSFET
Canonical Name: 2SK4177-DL-1E N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

2SK4177-DL-1E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb Free

2SK4177-DL-1E Features

  • N-Channel MOSFET rated for 1500V drain-to-source voltage.
  • Continuous drain current of 2A with 4A pulse capability.
  • Typical on-resistance of 10Ω at 10V gate drive.
  • Surface-mount TO-263-2L package for automated assembly.
  • Lead-free and RoHS3 compliant for environmental standards.

2SK4177-DL-1E Applications

  • High-voltage power supply switching circuits.
  • AC-DC converters and inverters.
  • Motor control and drive applications.
  • Lighting ballasts and power factor correction.

2SK4177-DL-1E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the 2SK4177-DL-1E?

The maximum drain-to-source voltage (VDSS) is 1500V.

What is the continuous drain current rating?

The continuous drain current (ID) is 2A DC.

What is the typical on-resistance of this MOSFET?

The typical static drain-to-source on-state resistance (RDS(on)) is 10Ω at ID=1A and VGS=10V.

What package is the 2SK4177-DL-1E available in?

It is available in a surface-mount TO-263-2L package (also known as D²Pak).

What is the maximum operating junction temperature?

The maximum channel temperature (Tch) is 150°C.

Is the 2SK4177-DL-1E RoHS compliant?

Yes, it is listed as RoHS3 Compliant and is lead-free (Pb Free).

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