| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW27N60M2-EP is an N-Channel power MOSFET manufactured by STMicroelectronics, designed for high-voltage switching applications. It features a maximum drain-to-source voltage (Vdss) of 600 V and a continuous drain current of 20 A at case temperature. The device offers a low on-resistance of 163 mOhm maximum at a gate drive of 10 V and drain current of 10 A, ensuring efficient power conversion.
The gate charge is 33 nC at 10 V, enabling fast switching with moderate drive requirements. Input capacitance is 1320 pF at 100 V drain-source bias. The threshold voltage is 4.75 V maximum at 250 µA drain current, and the gate-source voltage is rated to ±25 V. Power dissipation is 170 W at case temperature.
The MOSFET is housed in a TO-247-3 through-hole package, suitable for PCB mounting with heatsinking. It operates over a junction temperature range of -55°C to 150°C, making it suitable for industrial and power conversion environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-247-3 through-hole package.
-55°C to 150°C (junction temperature).
Maximum 4.75 V at 250 µA drain current.
163 mOhm at 10A drain current and 10V gate voltage.
Maximum 33 nC at 10 V gate-source voltage.
N-Channel.