| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,800 pcs
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1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVH4L018N075SC1 from On Semiconductor is an N-Channel Silicon Carbide (SiC) MOSFET designed for high-performance applications. It features a drain-to-source voltage rating of 750V and a low typical on-resistance of 13.5 mOhm at 18V gate-source voltage. The device supports continuous drain current up to 140A at 25°C case temperature and has a maximum power dissipation of 500W.
Key electrical characteristics include a gate charge of 262 nC and an input capacitance of 5010 pF. The MOSFET operates within a junction temperature range of -55°C to 175°C. It is housed in a TO-247-4L package, suitable for through-hole mounting.
Typical applications for this SiC MOSFET include automotive on-board chargers, DC-DC converters for EV/HEV, and automotive traction inverters. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for demanding automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (VDSS) is 750 V.
The typical on-resistance is 13.5 mOhm at a gate-source voltage of 18 V.
The maximum continuous drain current is 140 A at a case temperature of 25°C.
The operating junction and storage temperature range is -55°C to 175°C.
It comes in a TO-247-4L package and is designed for through-hole mounting.
Yes, the RoHS status is RoHS3 Compliant.