| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH47N60N is an N-Channel MOSFET from ON Semiconductor's SUPREMOS super-junction technology. It is rated for a maximum drain-source voltage of 600V and continuous drain current of 47A at 25°C case temperature. The device features a typical on-resistance of 51.5 mΩ at Vgs=10V and Id=23.5A, with a maximum of 62 mΩ. Gate charge is typically 115 nC, enabling efficient switching. The MOSFET is avalanche tested with a single pulse avalanche energy rating of 3068 mJ. It is designed for high-frequency switching power converters such as PFC, server/telecom power, and solar inverters. The device is housed in a TO-247-3 through-hole package and is RoHS compliant and Pb-Free.
| Qty | Low | High |
|---|---|---|
| 32+ | $9.48 | $9.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
TO-247-3 through-hole package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and Pb-Free.
115 nC typical, 151 nC maximum at Vgs=10V.
29.7 A.
0.34°C/W maximum.