| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
399 pcs
|
399 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
399 pcs
|
399 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This STMicroelectronics STB18N60DM2 is a high voltage N-channel Power MOSFET belonging to the MDMesh™ DM2 fast recovery diode series. It is designed for demanding high efficiency converters and is suitable for bridge topologies and ZVS phase-shift converters.
Key electrical specifications include a 600V drain-to-source voltage (Vds) and a maximum on-resistance (Rds On) of 295mΩ at 6A and 10V gate-source voltage. The continuous drain current is rated at 12A at 25°C case temperature, and 7.6A at 100°C. It features a low gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 800 pF at 100V.
The device offers a maximum power dissipation of 90W at 25°C case temperature and operates within a junction temperature range of -55°C to 150°C. It also boasts extremely high dv/dt ruggedness and is 100% avalanche tested.
Packaged in a surface-mount D²PAK (TO-263) package, the STB18N60DM2 is suitable for various switching applications. The package is supplied on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the STB18N60DM2 is 600 V.
The maximum continuous drain current (Id) for the STB18N60DM2 is 12 A at a case temperature of 25°C.
The maximum on-resistance (Rds On) for the STB18N60DM2 is 295mOhm when measured at 6A drain current and 10V gate-source voltage.
The STB18N60DM2 operates within a storage temperature range of -55°C to 150°C and has a maximum junction temperature of 150°C.
The STB18N60DM2 is supplied in a D²PAK (TO-263) package, suitable for surface mounting.
The STB18N60DM2 is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the STB18N60DM2 is 1.