| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SQ4483BEEY-T1_GE3 is a P-Channel TrenchFET power MOSFET designed for high-performance applications. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 22A at 25°C.
This MOSFET boasts a low on-resistance (RDS(on)) of 8.5mOhm at 10A and 10V gate-source voltage, ensuring efficient power transfer. It operates across a wide temperature range from -55°C to +175°C, making it suitable for harsh environments. The device includes ESD protection up to 3000V and is 100% UIS tested.
Packaged in an 8-SOIC (Surface Mount) configuration, the SQ4483BEEY-T1_GE3 is designed for easy integration into printed circuit boards. Its robust construction and qualification for AEC-Q101 make it a reliable choice for automotive and industrial applications.
Key electrical characteristics include a gate-source threshold voltage (VGS(th)) of -2.5V maximum and a gate charge (Qg) of 113 nC at 10V. The maximum power dissipation is rated at 7W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -30V.
The continuous drain current is -22A at case temperature 25°C, and -13A at 125°C.
Maximum RDS(on) is 8.5mOhm at VGS = -10V and ID = 10A, and 20mOhm at VGS = -4.5V and ID = 20A.
The gate threshold voltage (VGS(th)) ranges from -1.5V minimum to -2.5V maximum, with a typical value of -2.0V at VDS = VGS and ID = -250µA.
The operating junction temperature range is -55°C to +175°C.
The device is available in an 8-SOIC (0.154", 3.90mm width) surface-mount package.
The total gate charge (Qg) is 113nC maximum at VGS = 10V.