| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,800 pcs
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1800 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6760A is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for low-voltage switching applications with a drain-source voltage rating of 25V and continuous drain current ratings of 27A at ambient temperature and 50A at case temperature. The device features a low maximum on-resistance of 3.2mOhm when driven at 10V gate-source voltage, enabling efficient power conversion.
The MOSFET has a gate charge of 62nC at 10V and an input capacitance of 3170pF at 13V Vds, indicating moderate switching speeds suitable for many power management circuits. The threshold voltage is 3V maximum at 250µA drain current. It operates over a wide junction temperature range from -55°C to 175°C, allowing use in demanding environments.
The device is offered in a surface mount package, specifically the TO-252-3 (DPak) with supplier device package TO-252AA. Power dissipation is 3.7W at ambient temperature and 65W at case temperature, which should be considered in thermal design. The surface mount package facilitates compact PCB layout and automated assembly.
The drain-source voltage rating is 25V.
It is available in a surface mount TO-252-3 (DPak) package, also known as TO-252AA.
The operating temperature range is -55°C to 175°C (junction).
According to the available data, the FDD6760A is RoHS3 compliant, but this information is unverified.
The continuous drain current is 27A at 25°C ambient temperature and 50A at case temperature.
The maximum on-resistance is 3.2mOhm at 27A drain current and 10V gate-source voltage.
The maximum gate charge is 62nC at 10V gate-source voltage.
The maximum input capacitance is 3170pF at 13V drain-source voltage.