| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,794 pcs
|
1794 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies SPW55N80C3FKSA1 is a high-performance N-channel power MOSFET. It is designed to handle a maximum drain-source voltage of 800V and can sustain a continuous drain current of 54.9A at a case temperature.
This MOSFET utilizes MOSFET technology and operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a maximum Rds On of 85mOhm at 32.6A and 10V, an input capacitance of 7520 pF at 100V, and a gate charge of 288 nC at 10V. The gate threshold voltage is 3.9V at 3.3mA, with a maximum gate-source voltage of ±20V.
The component is housed in a TO-247-3 package and is designed for through-hole mounting. It has a maximum power dissipation of 500W (Tc). The RoHS status is RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $16.44 | $16.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V maximum.
54.9A at case temperature.
85 mOhm maximum at 32.6A and 10V gate voltage.
288 nC maximum at 10V gate voltage.
-55°C to 150°C junction temperature.
TO-247-3 (PG-TO247-3) through-hole package.
7520 pF at 100V drain-source voltage.