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FDMA410NZT N-Channel PowerTrench MOSFET, 20V Vds, 9.5A Id, 23mΩ Rds(on) at 4.5V. Surface mount in 6-UDFN package.
Mfr Part #:

FDMA410NZT

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel PowerTrench MOSFET, 20V Vds, 9.5A Id, 23mΩ Rds(on) at 4.5V. Surface mount in 6-UDFN package.
✓ Total Stock: 1,766 pcs
$ Price Range: $1.06

FDMA410NZT Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
1,766 pcs
On Request
1766 pcs On Request 1 On Request On Request On Request On Request On Request
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FDMA410NZT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMA410NZT Description

Short technical summary and product information.

The FDMA410NZT is a single N-Channel MOSFET designed using onsemi's advanced PowerTrench process. It features a maximum drain-source voltage of 20V and a continuous drain current of 9.5A at 25°C. The device offers low on-resistance: 23mΩ maximum at Vgs=4.5V, 29mΩ at 2.5V, 36mΩ at 1.8V, and 60mΩ at 1.5V, enabling efficient operation at low gate voltages.

 

This MOSFET is housed in an ultra-thin 6-UDFN exposed pad package (MicroFET 2x2) with a maximum height of 0.55mm, making it suitable for space-constrained applications. It includes HBM ESD protection greater than 1.5kV. The device is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.

 

Typical applications include Li-ion battery pack protection, baseband switching, load switching, DC-DC conversion, and mobile device switching. The operating junction temperature range is -55°C to +150°C.

FDMA410NZT Quick Information

Product Type: MOSFET
Canonical Name: FDMA410NZT N-Channel PowerTrench MOSFET
Subcategory: N-Channel MOSFET

FDMA410NZT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMA410NZT Estimated Pricing

Qty Low High
1+ $1.06 $1.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMA410NZT Features

  • N-Channel PowerTrench MOSFET design.
  • 20V drain-source voltage rating.
  • 9.5A continuous drain current.
  • Low 23mΩ on-resistance at 4.5V.
  • Ultra-thin 0.55mm 6-UDFN package.

FDMA410NZT Applications

  • Ideal for Li-ion battery pack protection.
  • Used in baseband and load switching.
  • Suitable for DC-DC conversion circuits.
  • Designed for mobile device switching.

FDMA410NZT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMA410NZT?

The maximum drain-source voltage is 20V.

What package is the FDMA410NZT available in?

It is available in a 6-UDFN exposed pad package (MicroFET 2x2).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FDMA410NZT RoHS compliant?

Yes, it is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.

What is the maximum continuous drain current?

The maximum continuous drain current is 9.5A at Ta=25°C (Note 1a).

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance is 23mΩ at Vgs=4.5V, Id=9.5A.

Does the FDMA410NZT have ESD protection?

Yes, it has HBM ESD protection greater than 1.5kV.

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