| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,782 pcs
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1782 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQPF10N50CF is an N-Channel MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a drain-source breakdown voltage of 500V and a continuous drain current of 10A at 25°C case temperature. The device uses MOSFET (Metal Oxide) technology and is rated for a maximum gate-source voltage of ±30V.
Electrical characteristics include a maximum on-resistance of 610mOhm at 5A drain current and 10V gate drive, a maximum gate threshold voltage of 4V at 250µA, a total gate charge of 56nC at 10V, and an input capacitance of 2096pF at 25V drain-source voltage. Maximum power dissipation is 48W at 25°C case temperature.
The MOSFET is housed in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting. It operates over a junction temperature range of -55°C to 150°C. The device is suitable for power switching circuits such as AC-DC converters, DC-DC converters, and motor control where high voltage and moderate current are required.
500V.
TO-220-3 Full Pack (TO-220F-3).
-55°C to 150°C (junction temperature).
RoHS3 compliant according to unverified data.
4V at 250µA drain current.
610mOhm maximum at 5A drain current and 10V gate voltage.
56nC at 10V gate voltage.