| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STW7N90K5 is an N-Channel MOSFET from STMicroelectronics, designed for high-voltage switching applications. It features a drain-source voltage rating of 900V and a continuous drain current of 7A at case temperature. The device can dissipate up to 110W of power and operates over a junction temperature range of -55°C to 150°C.
The gate threshold voltage is 5V at 100µA, and the recommended drive voltage is 10V for optimal on-resistance. The maximum gate-source voltage is ±30V. This MOSFET uses metal-oxide semiconductor technology and is housed in a TO-247-3 through-hole package, which facilitates efficient heat sinking in power circuits.
Typical applications include high-voltage power supplies, switch-mode power converters, motor drives, and inverters. The through-hole mounting allows for robust mechanical attachment and thermal management in industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
TO-247-3.
-55°C to 150°C (junction temperature).
5V at 100µA drain current.
±30V.
110W at case temperature.