| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDPF13N50NZ is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring up to 500V drain-source voltage and 12A continuous drain current. The device features a maximum on-resistance of 540mΩ at 10V gate drive, ensuring efficient power conversion.
With a maximum gate charge of 39nC and input capacitance of 1930pF, the FDPF13N50NZ offers moderate switching speeds suitable for power supplies and motor control circuits. The maximum power dissipation is 42W at case temperature. The gate threshold voltage is 5V maximum at 250µA drain current.
The MOSFET is housed in a TO-220-3 Full Pack (TO-220F) through-hole package, providing good thermal performance and easy mounting on heatsinks. The device is RoHS3 compliant and has an MSL of 1 (unlimited). It is suitable for applications such as switch-mode power supplies, AC-DC converters, and motor drives.
500V.
TO-220-3 Full Pack (TO-220F) through-hole package.
Yes, it is RoHS3 compliant.
12A.
540mΩ maximum at Vgs=10V and Id=6A.
39nC maximum at Vgs=10V.
42W maximum at case temperature.