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FQA19N20C FQA19N20C is a 200V N-Channel MOSFET by On Semiconductor. It offers 21.8A continuous drain current and 0.17 ohm on-resistance at 10V gate drive.
Mfr Part #:

FQA19N20C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQA19N20C is a 200V N-Channel MOSFET by On Semiconductor. It offers 21.8A continuous drain current and 0.17 ohm on-resistance at 10V gate drive.
✓ Total Stock: 1,800 pcs
$ Price Range: $1.26

FQA19N20C Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
1,800 pcs
On Request
1800 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQA19N20C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQA19N20C Description

Short technical summary and product information.

The FQA19N20C is a 200V N-Channel enhancement mode power MOSFET manufactured using Fairchild Semiconductor's planar stripe DMOS technology, now part of On Semiconductor. It is designed to minimize on-state resistance and provide superior switching performance. Key specifications include a drain-to-source voltage of 200V, continuous drain current of 21.8A at 25°C (13.8A at 100°C), and a maximum on-resistance of 170mOhm at 10V gate drive. The device features low gate charge (typical 40.5nC) and low reverse transfer capacitance (85pF typical), enabling fast switching. It is 100% avalanche tested with a single pulse avalanche energy rating of 433mJ. The MOSFET is housed in a through-hole TO-3P-3 package (SC-65-3), with a maximum power dissipation of 180W at case temperature 25°C and a junction-to-case thermal resistance of 0.69°C/W. These characteristics make it well suited for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.

FQA19N20C Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: FQA19N20C 200V N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQA19N20C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA19N20C Estimated Pricing

Qty Low High
1+ $1.26 $1.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA19N20C Features

  • 200V drain-source breakdown voltage.
  • 21.8A continuous drain current at 25°C.
  • Low on-resistance: 170mOhm max at 10V.
  • Fast switching with 40.5nC typical gate charge.
  • 100% avalanche tested for ruggedness.

FQA19N20C Applications

  • High-efficiency switched-mode power supplies.
  • Active power factor correction circuits.
  • Electronic lamp ballasts with half-bridge.
  • DC-DC converters and motor drives.

FQA19N20C FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the FQA19N20C?

The drain-to-source breakdown voltage (Vdss) is 200 V minimum.

What is the package type of the FQA19N20C?

It comes in a TO-3P-3, SC-65-3 (through-hole) package.

What is the operating temperature range of the FQA19N20C?

The operating junction temperature range is -55°C to 150°C.

Is the FQA19N20C RoHS compliant?

The product is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

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