| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | 1226+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This P-Channel MOSFET from Renesas, part number UPA2718AGR-E1-AT, is suitable for various electronic applications. It operates with a maximum drain-to-source voltage of 30V and can handle a continuous current of 13A at ambient temperature. The MOSFET exhibits a low on-resistance of 9mOhm at 6.5A and 10V.
Key electrical characteristics include an input capacitance of 2810 pF at 10V and a gate charge of 67 nC at 10V. The gate threshold voltage is a maximum of 2.5V at 1mA. The device utilizes MOSFET (Metal Oxide) technology.
The UPA2718AGR-E1-AT is provided in an 8-PSOP package, designed for surface mounting. Its dimensions are specified within the 8-SOIC (0.173", 4.40mm Width) standard. The component is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
13A at ambient temperature.
9mOhm maximum at 6.5A and 10V.
2.5V maximum at 1mA.
2810pF maximum at 10V.
67nC maximum at 10V.
8-PSOP (8-SOIC compatible) surface mount.