| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,759 pcs
|
1759 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
IRFD310PBF is an N-Channel power MOSFET from Vishay Siliconix. It is rated for a maximum drain-to-source voltage of 400V and can handle a continuous drain current of 0.35A at 25°C ambient temperature. The maximum on-resistance is 3.6Ω when driven with a 10V gate-to-source voltage and 0.21A drain current. The device is avalanche rated and features a fast-switching design suitable for high-voltage applications.
The MOSFET comes in a 4-DIP (0.300", 7.62mm) through-hole package with the supplier device package designation 4-HVMDIP. It is designed for automatic insertion and can be stacked on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface, supporting power dissipation up to 1W at 25°C.
The part operates over a junction temperature range of -55°C to +150°C. Key electrical characteristics include a total gate charge of 17nC at 10V, input capacitance of 170pF at 25V drain-source voltage, and a gate threshold voltage between 2.0V and 4.0V at 250µA drain current. The part is listed as RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $2.59 | $2.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 400V.
It is available in a 4-DIP (0.300", 7.62mm) through-hole package, with a 4-HVMDIP supplier device package.
The junction and storage temperature range is -55°C to +150°C.
The part is listed as RoHS3 compliant according to existing data. REACH status is unaffected.
The maximum continuous drain current is 0.35A at 25°C ambient temperature.
The maximum on-resistance is 3.6Ω at a gate-source voltage of 10V and drain current of 0.21A.
The maximum power dissipation is 1W at 25°C ambient temperature.