What are Transistors - FETs, MOSFETs - Single ?
Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.
Parts in this category
Tap rows to select parts
Compare stocked parts across manufacturers and distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
On Semiconductor
|
108
|
Price on request
108
|
8.6A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 38.5 nC @ 10 V | 2563 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 810mW (Ta) | 6.5mOhm @ 7.5A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Toshiba
|
108
|
Price on request
108
|
60A (Tc) | 60 V | 4.5V, 10V | - | N-Channel | 22 nC @ 10 V | 1875 pF @ 30 V | Surface Mount | 175°C (TJ) | 81W (Tc) | 13.5mOhm @ 10A, 4.5V | 8-SOP Advance (5x5) | MOSFET (Metal Oxide) | ±20V | 2.5V @ 200µA | |
Toshiba
|
106
|
Price on request
106
|
3.5A (Ta) | 20 V | 1.8V, 4V | - | N-Channel | 4.8 nC @ 4 V | 320 pF @ 10 V | Surface Mount | 150°C (TJ) | 700mW (Ta) | 56mOhm @ 2A, 4V | TSM | MOSFET (Metal Oxide) | ±12V | - | |
On Semiconductor
|
105
|
Price on request
105
|
52A (Ta), 370A (Tc) | 40 V | 4.5V, 10V | - | N-Channel | 181 nC @ 10 V | 12168 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.2W (Ta), 167W (Tc) | 0.75mOhm @ 50A, 10V | 5-DFN (5x6) (8-SOFL) | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
|
Infineon Technologies
|
105
|
Price on request
105
|
100A (Tc) | 80 V | 6V, 10V | - | N-Channel | 54 nC @ 10 V | 3900 pF @ 40 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta), 104W (Tc) | 4mOhm @ 50A, 10V | PG-TDSON-8-7 | MOSFET (Metal Oxide) | ±20V | 3.8V @ 67µA | |
Vishay
|
105
|
Price on request
105
|
16A (Tc) | 60 V | 4.5V, 10V | - | P-Channel | 38 nC @ 10 V | 1385 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 53W (Tc) | 65mOhm @ 5.7A, 10V | PowerPAK® 1212-8 | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
On Semiconductor
|
105
|
Price on request
105
|
2.8A (Tc) | 600 V | 10V | - | N-Channel | 19 nC @ 10 V | 670 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta), 49W (Tc) | 2.5Ohm @ 1.4A, 10V | TO-252AA | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
On Semiconductor
|
104
|
Price on request
104
|
15.5A (Ta) | 60 V | 5V | - | P-Channel | 26 nC @ 5 V | 1190 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 65W (Tc) | 150mOhm @ 7.5A, 5V | DPAK | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
IXYS
|
103
|
Price on request
103
|
32A (Tc) | 500 V | 10V | - | N-Channel | 190 nC @ 10 V | 4925 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 360W (Tc) | 160mOhm @ 16A, 10V | TO-247AD (IXFH) | MOSFET (Metal Oxide) | ±20V | 4.5V @ 4mA | |
Harris Semiconductor
|
103
|
Price on request
103
|
9.2A (Tc) | 100 V | - | - | N-Channel | 15 nC @ 10 V | 350 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 60W (Tc) | 270mOhm @ 5.6A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
Harris Semiconductor
|
103
|
Price on request
103
|
50A (Tc) | 50 V | 10V | - | N-Channel | 160 nC @ 20 V | - | Through Hole | -55°C ~ 175°C (TJ) | 132W (Tc) | 22mOhm @ 50A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250nA | |
IXYS
|
102
|
Price on request
102
|
24A (Tc) | 500 V | 10V | - | N-Channel | 190 nC @ 10 V | 4200 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 230mOhm @ 12A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
On Semiconductor
|
100
|
Price on request
100
|
5.5A (Tc) | 200 V | 5V, 10V | - | N-Channel | 9 nC @ 5 V | 500 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta), 45W (Tc) | 750mOhm @ 2.75A, 10V | TO-252AA | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
|
IXYS
|
100
|
Price on request
100
|
140A (Tc) | 50 V | 10V | - | P-Channel | 200 nC @ 10 V | 13500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 298W (Tc) | 9mOhm @ 70A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±15V | 4V @ 250µA | |
STMicroelectronics
|
100
|
Price on request
100
|
11A (Tc) | 650 V | 10V | - | N-Channel | 22 nC @ 10 V | 810 pF @ 100 V | Through Hole | 150°C (TJ) | 125W (Tc) | 340mOhm @ 5.5A, 10V | TO-220 | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA | |
|
STMicroelectronics
|
100
|
Price on request
100
|
62A (Tc) | 33 V | 10V | - | N-Channel | 47 nC @ 10 V | 1330 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 110W (Tc) | 15mOhm @ 30A, 10V | TO-220 | MOSFET (Metal Oxide) | Clamped | 4V @ 250µA | |
Vishay
|
100
|
Price on request
100
|
3.6A (Tc) | 900 V | 10V | - | N-Channel | 78 nC @ 10 V | 1200 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 125W (Tc) | 3.7Ohm @ 2.2A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
WOLFSPEED
|
100
|
Price on request
100
|
100A (Tc) | 1200 V | 15V | - | N-Channel | 162 nC @ 15 V | 4818 pF @ 1000 V | Through Hole | -40°C ~ 175°C (TJ) | 469W (Tc) | 28.8mOhm @ 50A, 15V | TO-247-4L | SiCFET (Silicon Carbide) | +15V, -4V | 3.6V @ 17.7mA | |
IXYS
|
100
|
Price on request
100
|
210A (Tc) | 200 V | 10V | - | N-Channel | 255 nC @ 10 V | 18600 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 1500W (Tc) | 10.5mOhm @ 105A, 10V | PLUS264™ | MOSFET (Metal Oxide) | ±20V | 4.5V @ 8mA | |
Infineon Technologies
|
100
|
Price on request
100
|
195A (Tc) | 24 V | 10V | - | N-Channel | 240 nC @ 10 V | 7590 pF @ 24 V | Surface Mount | -55°C ~ 175°C (TJ) | 300W (Tc) | 1.65mOhm @ 195A, 10V | D2PAK | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
Harris Semiconductor
|
100
|
Price on request
100
|
5.4A (Tc) | 600 V | 10V | - | N-Channel | 60 nC @ 10 V | 1300 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 125W (Tc) | 1.6Ohm @ 3.4A, 10V | TO-220 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
Harris Semiconductor
|
100
|
Price on request
100
|
7A (Tc) | 500 V | 10V | - | N-Channel | 63 nC @ 10 V | 1225 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 125W (Tc) | 1.1Ohm @ 4.4A, 10V | TO-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
100
|
Price on request
100
|
1A (Tc) | 200 V | 10V | - | N-Channel | 9.3 nC @ 10 V | 225 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 3.1W (Ta) | 1.5Ohm @ 500mA, 10V | TO-92L | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Toshiba
|
100
|
Price on request
100
|
13A (Ta) | 250 V | 10V | - | N-Channel | 25 nC @ 10 V | 1100 pF @ 100 V | Through Hole | 150°C (TJ) | 102W (Tc) | 250mOhm @ 6.5A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 1mA | |
Nexperia USA Inc.
|
100
|
Price on request
100
|
120A (Tc) | 80 V | 10V | - | N-Channel | 111 nC @ 10 V | 8161 pF @ 40 V | Surface Mount | -55°C ~ 175°C (TJ) | 306W (Tc) | 3.5mOhm @ 25A, 10V | D2PAK | MOSFET (Metal Oxide) | ±20V | 4V @ 1mA | |
On Semiconductor
|
100
|
Price on request
100
|
23A (Tc) | 400 V | 10V | - | N-Channel | 60 nC @ 10 V | 3030 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 235W (Tc) | 190mOhm @ 11.5A, 10V | TO-3PN | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Vishay
|
100
|
Price on request
100
|
1.8A (Tc) | 400 V | 10V | - | P-Channel | 13 nC @ 10 V | 270 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 50W (Tc) | 7Ohm @ 1.1A, 10V | D-Pak | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Texas Instruments
|
100
|
Price on request
100
|
100A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 64 nC @ 4.5 V | 9000 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.2W (Ta), 195W (Tc) | 1mOhm @ 35A, 10V | 8-VSON-CLIP (5x6) | MOSFET (Metal Oxide) | ±20V | 1.8V @ 250µA | |
|
Texas Instruments
|
100
|
Price on request
100
|
100A (Tc) | 25 V | 4.5V, 10V | - | N-Channel | 47 nC @ 4.5 V | 6180 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.2W (Ta), 191W (Tc) | 1.07mOhm @ 30A, 10V | 8-VSONP (5x6) | MOSFET (Metal Oxide) | ±20V | 1.7V @ 250µA | |
Diodes Incorporated
|
100
|
Price on request
100
|
14.8A (Ta), 70A (Tc) | 60 V | 4.5V, 10V | - | N-Channel | 41.3 nC @ 10 V | 2090 pF @ 30 V | Surface Mount | -55°C ~ 175°C (TJ) | 31W (Ta) | 8mOhm @ 20A, 10V | TO-252-3 | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
|
ROHM Semiconductor
|
100
|
Price on request
100
|
200mA (Ta) | 50 V | 1.2V, 4.5V | - | N-Channel | - | 25 pF @ 10 V | Surface Mount | 150°C (TJ) | 150mW (Ta) | 2.2Ohm @ 200mA, 4.5V | VMT3 | MOSFET (Metal Oxide) | ±8V | 1V @ 1mA | |
|
Diodes Incorporated
|
100
|
Price on request
100
|
4.2A (Ta) | 70 V | 4.5V, 10V | - | N-Channel | 7.4 nC @ 10 V | 298 pF @ 40 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.11W (Ta) | 130mOhm @ 4.4A, 10V | TO-252-3 | MOSFET (Metal Oxide) | ±20V | 1V @ 250µA | |
Toshiba
|
100
|
Price on request
100
|
15A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 7.5 nC @ 4.5 V | 1130 pF @ 15 V | Surface Mount | 150°C (TA) | 1.25W (Ta) | 8.9mOhm @ 4A, 10V | 6-UDFNB (2x2) | MOSFET (Metal Oxide) | ±20V | 2.1V @ 100µA | |
Vishay
|
100
|
Price on request
100
|
18A (Tc) | 25 V | 2.5V, 10V | - | N-Channel | 56 nC @ 10 V | 1925 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta), 5W (Tc) | 8.6mOhm @ 10A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±12V | 1.4V @ 250µA | |
|
Vishay
|
100
|
Price on request
100
|
3.3A (Tc) | 200 V | 10V | - | N-Channel | 8.2 nC @ 10 V | 140 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 36W (Tc) | 1.5Ohm @ 2A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
100
|
Price on request
100
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
IXYS
|
100
|
Price on request
100
|
64A (Tc) | 250 V | 10V | - | N-Channel | 105 nC @ 10 V | 3450 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 400W (Tc) | 49mOhm @ 500mA, 10V | TO-3P | MOSFET (Metal Oxide) | ±20V | 5V @ 250µA | |
NXP Semiconductors
|
100
|
Price on request
100
|
230mA (Ta) | 50 V | 10V | - | P-Channel | 0.35 nC @ 5 V | 36 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 340mW (Ta), 2.7W (Tc) | 7.5Ohm @ 100mA, 10V | DFN1006-3 | MOSFET (Metal Oxide) | ±20V | 2.1V @ 250µA | |
Renesas
|
99
|
Price on request
99
|
2.5A (Ta) | 1500 V | 15V | - | N-Channel | - | 990 pF @ 10 V | Through Hole | 150°C (TJ) | 100W (Tc) | 12Ohm @ 2A, 15V | TO-3P | MOSFET (Metal Oxide) | ±20V | - | |
Diodes Incorporated
|
99
|
Price on request
99
|
9.2A (Ta) | 60 V | 4.5V, 10V | - | N-Channel | 17 nC @ 10 V | 864 pF @ 30 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.5W (Ta) | 18mOhm @ 10A, 10V | 8-SO | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Vishay
|
99
|
Price on request
99
|
14A (Tc) | 100 V | 10V | - | N-Channel | 26 nC @ 10 V | 670 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.7W (Ta), 88W (Tc) | 160mOhm @ 8.4A, 10V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
On Semiconductor
|
99
|
Price on request
99
|
34A (Tc) | 200 V | 10V | - | N-Channel | 78 nC @ 10 V | 3100 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 210W (Tc) | 75mOhm @ 17A, 10V | TO-3P | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
STMicroelectronics
|
98
|
Price on request
98
|
6A (Tc) | 800 V | 10V | - | N-Channel | 13.4 nC @ 10 V | 360 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 110W (Tc) | 1.2Ohm @ 3A, 10V | TO-251 (IPAK) | MOSFET (Metal Oxide) | ±30V | 5V @ 100µA | |
|
On Semiconductor
|
98
|
Price on request
98
|
10.5A (Tc) | 400 V | 10V | - | N-Channel | 35 nC @ 10 V | 1090 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 135W (Tc) | 530mOhm @ 5.25A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
STMicroelectronics
|
98
|
Price on request
98
|
25A (Tc) | 600 V | 10V | - | N-Channel | 91 nC @ 10 V | 2700 pF @ 50 V | Through Hole | 150°C (TJ) | 190W (Tc) | 130mOhm @ 12.5A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
IXYS
|
98
|
Price on request
98
|
38A (Tc) | 800 V | 10V | - | N-Channel | 190 nC @ 10 V | 8340 pF @ 25 V | Chassis Mount | -55°C ~ 150°C (TJ) | 735W (Tc) | 220mOhm @ 500mA, 10V | SOT-227B | MOSFET (Metal Oxide) | ±30V | 4.5V @ 8mA | |
ROHM Semiconductor
|
98
|
Price on request
98
|
12A (Ta) | 30 V | 4.5V, 10V | - | P-Channel | 62 nC @ 10 V | 3200 pF @ 15 V | Surface Mount | 150°C (TJ) | 2W (Ta) | 8mOhm @ 12A, 10V | 8-HSMT (3.2x3) | MOSFET (Metal Oxide) | ±20V | 2.5V @ 1mA | |
|
Infineon Technologies
|
97
|
Price on request
97
|
5.1A (Tc) | 900 V | 10V | - | N-Channel | 28 nC @ 10 V | 710 pF @ 100 V | Surface Mount | -55°C ~ 150°C (TJ) | 83W (Tc) | 1.2Ohm @ 2.8A, 10V | PG-TO252-3 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 310µA | |
Vishay
|
97
|
Price on request
97
|
7.4A (Ta) | 30 V | 4.5V, 10V | - | P-Channel | 56 nC @ 10 V | - | Surface Mount | -55°C ~ 150°C (TJ) | 1.5W (Ta) | 18mOhm @ 11.7A, 10V | PowerPAK® 1212-8 | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
|
Infineon Technologies
|
97
|
Price on request
97
|
195A (Tc) | 40 V | 10V | - | N-Channel | 330 nC @ 10 V | 8920 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 380W (Tc) | 1.7mOhm @ 195A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA |
Showing 7451-7500 of 41,316 products