SI2337DS-T1-GE3 The Vishay Dale SI2337DS-T1-GE3 is a P-Channel MOSFET with a Drain-Source Voltage of 80V and a continuous drain current of 2.2A. It comes in a compact SOT-23-3 package.
Mfr Part #:

SI2337DS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2337DS-T1-GE3 is a P-Channel MOSFET with a Drain-Source Voltage of 80V and a continuous drain current of 2.2A. It comes in a compact SOT-23-3 package.
✓ Total Stock: 1,868 pcs
$ Price Range: $0.99

SI2337DS-T1-GE3 Available from 2 distributors

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✓ Non-Authorised
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Non-Authorised Inventory information
1,602 pcs
1602 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
266 pcs
266 pcs On Request 1 On Request On Request On Request On Request On Request

SI2337DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2337DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2337DS-T1-GE3 is a P-Channel MOSFET designed for power switching applications. It features a maximum Drain-Source Voltage (Vds) of 80V and a continuous drain current (Id) of 2.2A at 25°C case temperature.

 

This MOSFET offers a low on-resistance of 270mOhm at 1.2A and 10V gate-source voltage, contributing to efficient power handling. The gate-source voltage range is ±20V, with a threshold voltage (Vgs(th)) of 4V at 250µA.

 

Packaged in a SOT-23-3 (TO-236-3) surface-mount package, the SI2337DS-T1-GE3 is suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ).

 

Key electrical characteristics include a typical gate charge (Qg) of 7nC at 10V and an input capacitance (Ciss) of 500pF at 40V. The device also specifies a maximum power dissipation of 760mW at 25°C ambient temperature and 2.5W at 25°C case temperature.

SI2337DS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2337DS-T1-GE3 P-Channel 80V MOSFET
Subcategory: P-Channel

SI2337DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2337DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2337DS-T1-GE3 Features

  • P-Channel 80V MOSFET.
  • Continuous drain current 2.2A.
  • Low on-resistance 270mOhm max.
  • SOT-23-3 surface mount package.
  • Wide operating temperature range.

SI2337DS-T1-GE3 Applications

  • Used as load switches in portable consumer electronics.
  • Ideal for battery protection circuits in mobile devices.
  • Suitable for motor control driver stages in automation.
  • Functions effectively in DC-DC converter synchronous rectification.
  • Applied in automotive sensor interface and switching modules.

SI2337DS-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2337DS-T1-GE3?

The maximum drain-source voltage is 80V.

What is the continuous drain current of the SI2337DS-T1-GE3?

The continuous drain current is 2.2A at 25°C case temperature.

What is the on-resistance of the SI2337DS-T1-GE3?

The maximum on-resistance is 270mOhm at 1.2A drain current and 10V gate-source voltage.

What is the package type for the SI2337DS-T1-GE3?

The package type is SOT-23-3.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

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