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IRF7809AV N-Channel MOSFET from Infineon Technologies, rated for 30V drain-source voltage and 13.3A continuous drain current. Features low on-resistance of 9mOhm and is housed in an SO-8 package.
Mfr Part #:

IRF7809AV

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, rated for 30V drain-source voltage and 13.3A continuous drain current. Features low on-resistance of 9mOhm and is housed in an SO-8 package.
✓ Total Stock: 1,804 pcs
$ Price Range: $1.57

IRF7809AV Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,804 pcs
On Request
1804 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF7809AV Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF7809AV Description

Short technical summary and product information.

The IRF7809AV is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency DC-DC converter applications, particularly in CPU core power supplies. The device features a maximum drain-source voltage of 30V and a continuous drain current of 13.3A at 25°C ambient temperature. With a typical on-resistance of 7.0mOhm and maximum of 9.0mOhm at VGS=4.5V, it offers low conduction losses. The gate charge is typically 41nC, enabling fast switching. The MOSFET is optimized for synchronous buck converters, providing low RDS(on) and high Cdv/dt immunity. It is surface-mounted in an 8-SOIC package (8-SO) and can dissipate up to 2.5W at 25°C ambient. The operating junction temperature range is -55°C to 150°C. This device is RoHS3 compliant and has an MSL of 1 (unlimited).

IRF7809AV Quick Information

Product Type: MOSFET
Canonical Name: IRF7809AV N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRF7809AV Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF7809AV Estimated Pricing

Qty Low High
95+ $1.57 $1.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7809AV Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Low on-resistance of 9.0mOhm maximum.
  • High continuous drain current of 13.3A.
  • Optimized for synchronous buck converters.
  • Surface-mount SO-8 package.

IRF7809AV Applications

  • Ideal for CPU core DC-DC converters.
  • Used in high-efficiency power supplies.
  • Suitable for synchronous FET applications.
  • Designed for low conduction and switching losses.

IRF7809AV FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF7809AV?

30V maximum.

What package is the IRF7809AV available in?

8-SOIC (0.154", 3.90mm Width) surface-mount package.

What is the operating temperature range of the IRF7809AV?

-55°C to 150°C junction temperature.

Is the IRF7809AV RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the typical on-resistance of the IRF7809AV?

7.0mOhm typical, 9.0mOhm maximum at VGS=4.5V.

What is the typical gate charge of the IRF7809AV?

41 nC typical at VGS=5V.

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