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FDB082N15A The FDB082N15A is an N-Channel power MOSFET from On Semiconductor rated at 150V drain-to-source voltage and 117A drain current. It features a low on-resistance of 8.2mOhm and comes in a surface-mount D²PAK (TO-263) package.
Mfr Part #:

FDB082N15A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDB082N15A is an N-Channel power MOSFET from On Semiconductor rated at 150V drain-to-source voltage and 117A drain current. It features a low on-resistance of 8.2mOhm and comes in a surface-mount D²PAK (TO-263) package.
✓ Total Stock: 1,820 pcs

FDB082N15A Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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1,820 pcs
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FDB082N15A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB082N15A Description

Short technical summary and product information.

The FDB082N15A is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power management applications requiring a 150V drain-to-source voltage rating and a continuous drain current of 117A (at Tc). The device utilizes MOSFET (Metal Oxide) technology and delivers a typical drive voltage of 10V.

 

Key electrical characteristics include a maximum on-resistance of 8.2mOhm at Id=75A and Vgs=10V, a maximum input capacitance of 6040pF at Vds=25V, and a maximum gate charge of 84nC at Vgs=10V. The gate threshold voltage is 4V at Id=250µA. Maximum power dissipation is 294W at Tc.

 

The FDB082N15A is housed in a TO-263-3 (D²Pak) surface-mount package with the supplier device package designated as D²PAK (TO-263). It operates over a junction temperature range of -55°C to 175°C. This MOSFET is suitable for switching and power conversion circuits in industrial and automotive systems.

FDB082N15A Quick Information

Product Type: MOSFET
Canonical Name: FDB082N15A: N-Channel MOSFET, 150V, 117A, D²PAK (TO-263)
Subcategory: N-Channel Power MOSFET

FDB082N15A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB082N15A Features

  • N-Channel MOSFET rated for 150V drain-source.
  • Continuous drain current up to 117A at Tc.
  • Low on-resistance of 8.2mOhm at 75A / 10V.
  • Surface-mount D²PAK (TO-263) package.
  • Operates from -55°C to 175°C junction temperature.

FDB082N15A Applications

  • Suitable for high-current power switching circuits.
  • Used in DC-DC converter and inverter designs.
  • Applicable in motor drives and power supplies.
  • Ideal for automotive and industrial power management.

FDB082N15A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB082N15A?

The maximum drain-to-source voltage (Vdss) is 150V.

What is the continuous drain current rating of the FDB082N15A?

The continuous drain current is 117A at Tc (case temperature).

What is the on-resistance of the FDB082N15A?

The maximum on-resistance (Rds on) is 8.2mOhm at Id=75A and Vgs=10V.

What package is the FDB082N15A available in?

The FDB082N15A comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface-mount package. The supplier device package is D²PAK (TO-263).

What is the operating temperature range of the FDB082N15A?

The operating temperature range is -55°C to 175°C (junction temperature).

Is the FDB082N15A RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this compliance has not been externally verified.

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