| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
857 pcs
|
857 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STH315N10F7-2 is an N-channel power MOSFET from STMicroelectronics designed for high-current switching applications. It features a drain-to-source voltage rating of 100V and a continuous drain current of 180A at case temperature, with a maximum power dissipation of 315W.
This MOSFET offers a very low on-resistance of 2.3 mOhm maximum at 60A and 10V gate drive, enabling high efficiency in power conversion. The gate threshold voltage is 4.5V maximum at 250µA, and the device can be driven with a 10V gate drive voltage. Input capacitance is 12800 pF at 25V, and total gate charge is 180 nC at 10V.
The STH315N10F7-2 is housed in a TO-263-3 D²Pak (H2Pak-2) surface-mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100 V.
The maximum continuous drain current is 180 A at case temperature.
The maximum power dissipation is 315 W at case temperature.
The maximum on-resistance is 2.3 mOhm at 60 A drain current and 10 V gate-source voltage.
The junction temperature range is from -55°C to 175°C.
The device is available in TO-263-3, D²Pak (2 leads + tab), TO-263AB, and supplier device package H2Pak-2.
The maximum gate charge is 180 nC at 10 V gate-source voltage.