| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,146 pcs
|
2146 pcs | On Request | 1 | On Request | On Request | 1516 | On Request | On Request | |
|
1,846 pcs
|
1846 pcs | On Request | 1 | On Request | On Request | 1712+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RQ1E050RPTR is a P-Channel MOSFET with a drain-to-source voltage (Vdss) of 30V and a continuous current rating of 5A. This device utilizes MOSFET technology and is designed for surface mount applications, housed in a TSMT8 package.
Key electrical characteristics include a maximum on-resistance (Rds On) of 31mOhm at 5A and 10V, a gate threshold voltage (Vgs(th)) of 2.5V at 1mA, and a gate-to-source voltage range of ±20V. The input capacitance (Ciss) is 1300pF at 10V, and the gate charge (Qg) is 28nC at 10V.
With a maximum power dissipation of 700mW (Ta) and an operating temperature range of -150°C to 150°C (TJ), this MOSFET is suitable for applications requiring efficient power switching. The TSMT8 package offers a compact footprint for surface mounting.
This component is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. It is designed for general-purpose switching applications where a P-Channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the RQ1E050RPTR is 30V.
The RQ1E050RPTR has a maximum continuous current rating of 5A.
The Rds On (Max) for the RQ1E050RPTR is 31mOhm at 5A and 10V.
The operating temperature range (TJ) for the RQ1E050RPTR is 150°C.
The RQ1E050RPTR is a P-Channel MOSFET.
The RQ1E050RPTR is supplied in the TSMT8 package.