IRFP4468PBFXKMA1 N-Channel power MOSFET with 100V drain-source voltage and 290A continuous drain current. Packaged in a TO-247-3 through-hole case.
Mfr Part #:

IRFP4468PBFXKMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET with 100V drain-source voltage and 290A continuous drain current. Packaged in a TO-247-3 through-hole case.
✓ Total Stock: 1,820 pcs
$ Price Range: $4.69 - $8.57

IRFP4468PBFXKMA1 Available from 1 distributor

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✓ Non-Authorised
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IRFP4468PBFXKMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP4468PBFXKMA1 Description

Short technical summary and product information.

The IRFP4468PBFXKMA1 is an N-Channel power MOSFET from Infineon Technologies, designed for high efficiency power conversion applications. This device features a drain-source breakdown voltage of 100V and a continuous drain current of 290A (silicon limited) with a maximum pulsed current of 1120A. The ultra-low typical on-resistance of 2.0 mOhm minimizes conduction losses, making it suitable for high current circuits.

 

With a maximum gate charge of 540 nC and input capacitance of 19860 pF, the MOSFET is optimized for high speed switching. Thermal management is supported by a junction-to-case thermal resistance of 0.29 °C/W and a maximum power dissipation of 520W at 25°C case temperature. The device operates over a junction temperature range of -55°C to 175°C.

 

The part is housed in a TO-247-3 through-hole package (TO-247AC) for robust mounting and heat sinking. It is lead-free and designed for ruggedness with enhanced avalanche and dynamic dV/dt capability. Applications include synchronous rectification in SMPS, uninterruptible power supplies, high speed power switching, and hard switched circuits.

IRFP4468PBFXKMA1 Quick Information

Product Type: Power MOSFET
Series: IRFP
Canonical Name: IRFP4468PBFXKMA1 - N-Channel Power MOSFET, 100V, 290A, TO-247-3
Subcategory: Power MOSFET

IRFP4468PBFXKMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFP4468PBFXKMA1 Estimated Pricing

Qty Low High
1+ $8.57 $8.57
10+ $7.75 $7.75
100+ $6.41 $6.41
500+ $5.59 $5.59
1,000+ $4.87 $4.87
2,000+ $4.69 $4.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFP4468PBFXKMA1 Features

  • N-Channel MOSFET with 100V drain-source breakdown voltage.
  • Continuous drain current of 290A (silicon limited).
  • Ultra-low on-resistance of 2.0 mOhm typical.
  • TO-247-3 through-hole package for robust mounting.
  • Max junction temperature of 175°C for reliable operation.

IRFP4468PBFXKMA1 Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply (UPS) systems.
  • High speed power switching circuits.
  • Hard switched and high frequency circuits.

IRFP4468PBFXKMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage (drain-source) of the IRFP4468PBFXKMA1?

The maximum drain-to-source voltage is 100 V.

What package does the IRFP4468PBFXKMA1 come in?

It is housed in a TO-247-3 through-hole package (TO-247AC).

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 175°C.

Is the IRFP4468PBFXKMA1 RoHS compliant?

The part is indicated as RoHS3 compliant (low confidence, unverified). It is also marked as lead-free in the datasheet.

What is the gate threshold voltage of this MOSFET?

The maximum gate threshold voltage is 4 V at Id=250 µA.

What is the typical on-resistance of the IRFP4468PBFXKMA1?

The typical drain-source on-resistance is 2.0 mΩ at Id=180A, Vgs=10V; maximum is 2.6 mΩ.

What is the maximum power dissipation of this device?

Maximum power dissipation is 520 W at case temperature 25°C.

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