| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,827 pcs
|
1827 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF5N50T is an N-channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage of 500V and a continuous drain current of 5A at case temperature. The device has a typical on-resistance of 1.4 Ohms at 2.5A and 10V gate drive. Gate charge is 15 nC at 10V, and input capacitance is 640 pF at 25V.
This MOSFET is designed for high-voltage switching applications such as power supplies, inverters, and motor control. With a maximum power dissipation of 28W and an operating temperature range of -55°C to 150°C, it can handle demanding environments. The through-hole TO-220F-3 package provides robust thermal performance and ease of mounting.
The part is RoHS compliant (unverified) and has a moisture sensitivity level of 1 (unlimited). It is a direct replacement for the Fairchild semiconductor part under the ON Semiconductor portfolio.
| Qty | Low | High |
|---|---|---|
| 1,827+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
5A at case temperature.
TO-220F-3 (full pack, through-hole).
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified from datasheet).
1.4 Ohm maximum at 2.5A, 10V.
15 nC maximum at 10V gate-source voltage.