SI3410DV-T1-GE3 The Vishay Dale SI3410DV-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 8A continuous current rating. It is designed for surface mounting in a SOT-23-6 package.
Mfr Part #:

SI3410DV-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI3410DV-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 8A continuous current rating. It is designed for surface mounting in a SOT-23-6 package.
✓ Total Stock: 1,805 pcs
$ Price Range: $0.99

SI3410DV-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,615 pcs
1615 pcs On Request 1 On Request On Request 1349+ On Request On Request
Non-Authorised Inventory information
190 pcs
190 pcs On Request 1 On Request On Request On Request On Request On Request

SI3410DV-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI3410DV-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI3410DV-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 30V and can handle a continuous drain current of 8A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 19.5mOhm at 5A and 10V gate-source voltage, with a drive voltage range of 4.5V to 10V. The input capacitance is rated at 1295pF at 15V, and the gate charge is a maximum of 33nC at 10V.

 

Packaged in a SOT-23-6 Thin (TSOT-23-6) surface mount configuration, the SI3410DV-T1-GE3 operates within a temperature range of -55°C to 150°C. Its maximum power dissipation is 2W when mounted on a PCB (Ta) or 4.1W at 25°C case temperature (Tc).

 

The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1. It is also noted as Halogen-free according to IEC 61249-2-21 definition.

SI3410DV-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si3410DV N-Channel 30V MOSFET
Subcategory: N-Channel

SI3410DV-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI3410DV-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI3410DV-T1-GE3 Features

  • 30V drain-source breakdown voltage.
  • 8A continuous drain current.
  • Low Rds(on) of 19.5mOhm.
  • SOT-23-6 Thin package.
  • Surface mount capability.

SI3410DV-T1-GE3 Applications

  • Suitable for low-voltage power switching circuits.
  • Used in DC-DC converter and load switch designs.
  • Ideal for battery management and power distribution.

SI3410DV-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI3410DV-T1-GE3?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current rating is 8A at 25°C case temperature.

What is the Rds On at 5A and 10V Vgs?

The Rds On is a maximum of 19.5mOhm at 5A and 10V Vgs.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI3410DV-T1-GE3 available in?

It is available in a SOT-23-6 Thin, TSOT-23-6 package.

Is this MOSFET halogen-free?

Yes, it is Halogen-free according to IEC 61249-2-21 definition.

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