Mfr Part #:

IRF7831TRPBF

N-Channel MOSFET, 30V drain-to-source voltage, 21A continuous drain current, low on-resistance of 3.6mOhm at 10V, in a surface-mount SO-8 package.

✓ Total Stock: 1,842 pcs

$ Price Range: $0.46 - $1.76

IRF7831TRPBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,842 pcs On Request	1842 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF7831TRPBF Description

Short technical summary and product information.

The IRF7831TRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family, designed for high-frequency synchronous buck converter applications in networking and computing systems. It features a maximum drain-to-source voltage of 30V and a continuous drain current of 21A at 25°C. The device offers ultra-low on-resistance: 3.6mOhm typical at Vgs=10V and Id=20A, and 4.4mOhm at Vgs=4.5V and Id=16A. The typical gate charge is 40nC, enabling efficient switching at high frequencies.

The MOSFET is fully characterized for avalanche energy with a maximum single-pulse avalanche energy of 100mJ. It is 100% tested for gate resistance. The package is an 8-SOIC (0.154", 3.90mm Width) Surface Mount device, with a supplier device package of 8-SO. The operating junction temperature range is -55°C to 150°C. The part is lead-free (PbF) and RoHS3 compliant (unverified).

IRF7831TRPBF Quick Information

Product Type: MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor)

Series: HEXFET

Canonical Name: IRF7831TRPBF N-Channel MOSFET, 30V, 21A, 8-SO

Subcategory: N-Channel MOSFET

IRF7831TRPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

IRF7831TRPBF Estimated Pricing

Qty	Low	High
1+	$1.76	$1.76
4,000+	$0.47	$0.47
8,000+	$0.46	$0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7831TRPBF Features

30V drain-to-source voltage rating.
21A continuous drain current capability.
Ultra-low on-resistance of 3.6mOhm at 10V.
Low gate charge of 40nC for efficient switching.
Surface-mount SO-8 package for compact designs.

IRF7831TRPBF Applications

High-frequency point-of-load synchronous buck converters.
Networking and computing system power supplies.
DC-DC converter applications requiring low Rds(on).

IRF7831TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the IRF7831TRPBF?

30V.

What package is the IRF7831TRPBF available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the IRF7831TRPBF RoHS compliant?

RoHS3 Compliant (unverified).

What is the typical gate charge?

40 nC at Vds=15V, Vgs=4.5V, Id=16A.

What is the maximum continuous drain current at 25°C?

21A.

What is the maximum on-resistance at 10V?

3.6 mOhm at Id=20A, Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	21 A (Ta=25°C)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Fall Time (Typ)	5.3 ns
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	6240 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5 W (Ta)
Rds On (Max) @ Id, Vgs	3.6 mOhm
Rise Time (Typ)	10 ns
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12 V
Vgs(th) (Max) @ Id	2.35V @ 250µA