| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,837 pcs
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1837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SPA20N60CFD is a 600V N-Channel Power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications. Key electrical characteristics include a drain-source breakdown voltage of 600V (minimum), continuous drain current of 20.7A at 25°C case temperature, and a maximum on-resistance of 0.22Ohm at VGS=10V. The device exhibits fast switching performance with typical turn-on delay of 12ns and rise time of 15ns. It also features avalanche energy capability of 690mJ single pulse and 80mJ repetitive. The gate threshold voltage is typically 4V. Thermal characteristics include a junction-to-case thermal resistance of 3.6K/W and an operating temperature range of -55°C to 150°C. This MOSFET is suitable for applications requiring high voltage and current handling with low conduction losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 600V at VGS=0V, ID=250µA.
The operating and storage temperature range is -55°C to 150°C.
The continuous drain current is 20.7A at TC=25°C and 13.1A at TC=100°C.
The maximum drain-source on-state resistance is 0.22Ohm at VGS=10V, ID=13.1A, Tj=25°C.
The typical gate threshold voltage is 4V at VDS=VGS, ID=1000µA.
The typical input capacitance is 2400pF.
The single pulse avalanche energy is 690mJ at ID=10A, VDD=50V.