| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,207 pcs
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1207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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628 pcs
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628 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The IRFS3806TRLPBF is a high-performance N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 60V and a continuous drain current of 43A at 25°C case temperature, making it suitable for high-current switching applications.
This MOSFET is optimized for high efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high-speed power switching circuits. The typical on-resistance is 12.6mΩ at VGS = 10V, with a maximum of 15.8mΩ, ensuring low conduction losses. The device exhibits a typical total gate charge of 30nC and an input capacitance of 1150pF, enabling fast switching performance.
Packaged in a surface-mount D2PAK (TO-263-3), the IRFS3806TRLPBF is designed for automated assembly and space-constrained designs. The operating junction temperature range extends from -55°C to 175°C, and the maximum power dissipation is 71W at 25°C case temperature. The enhanced body diode dv/dt and di/dt capability improves ruggedness in hard-switched and high-frequency circuits.
The drain-source breakdown voltage (V(BR)DSS) is 60V minimum.
At case temperature 25°C with VGS=10V, the maximum continuous drain current is 43A. At 100°C, it is 31A.
The typical on-resistance (RDS(on)) is 12.6mΩ and the maximum is 15.8mΩ at VGS=10V, ID=25A.
The MOSFET is offered in a surface-mount D2PAK (TO-263-3 / D²Pak) package.
The operating junction temperature range is -55°C to 175°C.
The part number suffix PbF indicates lead-free; RoHS compliance is not explicitly confirmed and is treated as low confidence.