IRFP4568PBF The IRFP4568PBF is an N-Channel power MOSFET from Infineon Technologies. It features a 150V drain-source breakdown voltage, 171A continuous drain current, and a typical on-resistance of 4.8 mOhm.
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IRFP4568PBF

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Mfr Name: Infineon Technologies
Infineon Technologies
The IRFP4568PBF is an N-Channel power MOSFET from Infineon Technologies. It features a 150V drain-source breakdown voltage, 171A continuous drain current, and a typical on-resistance of 4.8 mOhm.
✓ Total Stock: 1,855 pcs

IRFP4568PBF Available from 1 distributor

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IRFP4568PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP4568PBF Description

Short technical summary and product information.

The IRFP4568PBF is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It is designed for high efficiency power conversion applications including synchronous rectification in switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS).

 

This MOSFET offers a drain-to-source voltage (Vdss) of 150V and a continuous drain current (ID) of 171A at 25°C case temperature, with a maximum pulsed drain current of 684A. The static drain-to-source on-resistance (Rds(on)) is typically 4.8 mOhm and a maximum of 5.9 mOhm at VGS = 10V and ID = 103A. The device features a gate threshold voltage range of 3.0V to 5.0V and a maximum gate-to-source voltage of ±30V.

 

The IRFP4568PBF is housed in a TO-247AC (TO-247-3) through-hole package. It has a maximum power dissipation of 517W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. The device is characterized for avalanche energy with a single pulse avalanche energy rating of 763 mJ and features enhanced gate, avalanche, and dynamic dV/dt ruggedness.

IRFP4568PBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFP4568PBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFP4568PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFP4568PBF Features

  • 150V drain-source breakdown voltage.
  • 171A continuous drain current at 25°C.
  • 4.8 mOhm typical on-resistance at 10V.
  • TO-247AC through-hole package.
  • Enhanced avalanche and dV/dt ruggedness.

IRFP4568PBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply (UPS) systems.
  • High speed power switching circuits.
  • Hard switched and high frequency circuits.

IRFP4568PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFP4568PBF?

The drain-to-source breakdown voltage (Vdss) is 150V.

What is the maximum continuous drain current of the IRFP4568PBF?

The continuous drain current (ID) is 171A at TC = 25°C and 121A at TC = 100°C.

What is the on-resistance of the IRFP4568PBF?

The static drain-to-source on-resistance (Rds(on)) is typically 4.8 mOhm and a maximum of 5.9 mOhm at VGS = 10V and ID = 103A.

What is the operating temperature range of the IRFP4568PBF?

The operating junction temperature range is -55°C to 175°C.

What package does the IRFP4568PBF come in?

The IRFP4568PBF is supplied in a TO-247AC (TO-247-3) through-hole package.

What is the gate threshold voltage of the IRFP4568PBF?

The gate threshold voltage (Vgs(th)) is 3.0V minimum and 5.0V maximum at ID = 250 µA.

What is the maximum power dissipation of the IRFP4568PBF?

The maximum power dissipation is 517W at TC = 25°C.

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