| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,837 pcs
|
1837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRLR3636TRPBF is an N-Channel enhancement-mode MOSFET from Infineon Technologies, built with advanced MOSFET (Metal Oxide) technology. It is rated for a maximum drain-source voltage of 60V and a continuous drain current of 50A at the case temperature (Tc). The device features a low on-resistance of 6.8mOhm maximum when driven at 10V gate-to-source voltage, ensuring high efficiency in power switching applications.
Key electrical characteristics include a gate threshold voltage of 2.5V maximum at 100µA drain current, and a total gate charge of 49nC at 4.5V gate voltage. These parameters enable fast switching with reduced drive requirements. The MOSFET is optimized for low-voltage, high-current switching such as in DC-DC converters, motor control, and power management circuits.
The IRLR3636TRPBF is packaged in a DPAK (TO-252) surface-mount package, which offers a compact footprint suitable for automated assembly and space-constrained designs. The package is designed for efficient heat dissipation when mounted on a suitable PCB copper area.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.25 | $2.25 |
| 10+ | $1.44 | $1.44 |
| 100+ | $0.97 | $0.97 |
| 500+ | $0.78 | $0.78 |
| 1,000+ | $0.71 | $0.71 |
| 2,000+ | $0.66 | $0.66 |
| 4,000+ | $0.64 | $0.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 50A at the case temperature (Tc).
The maximum on-resistance is 6.8mOhm at 50A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 2.5V at 100µA drain current.
The maximum total gate charge is 49nC at 4.5V gate-source voltage.
It is available in a DPAK (TO-252) surface mount package.
It uses MOSFET (Metal Oxide) technology.