| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,842 pcs
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1842 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STL3NM60N is a high-performance N-Channel MOSFET. It features a drain-source breakdown voltage of 600V and a maximum on-resistance of 1.8 Ohms at 1A and 10V gate-source voltage. The gate charge is specified at 9.5 nC maximum at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C. It has a continuous drain current rating of 0.65A at ambient temperature (Ta) and 2.2A at case temperature (Tc). The power dissipation is rated at 2W for ambient temperature and 22W for case temperature.
The STL3NM60N is designed for surface mounting and comes in a PowerFlat™ (3.3x3.3) package, specifically the 8-PowerVDFN case. Its technology is based on MOSFET (Metal Oxide) principles, utilizing N-Channel enhancement mode.
This component is suitable for various power switching applications where high voltage and moderate current handling are required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 600 V.
The maximum on-resistance is 1.8 Ohm at 1A drain current and 10V gate-source voltage.
The gate charge is a maximum of 9.5 nC at 10V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The STL3NM60N is an N-Channel MOSFET.
It is supplied in a PowerFlat™ (3.3x3.3) package, specifically the 8-PowerVDFN case.