| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,840 pcs
|
1840 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ROHM Semiconductor RSR020N06TL is a single N-Channel MOSFET belonging to the Metal Oxide family. It is designed for surface mount applications and comes in a TSMT3 package (SC-96).
Key electrical specifications include a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 2A at 25°C. The on-resistance (Rds On) is a maximum of 170mOhm at 2A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 2.5V at 1mA, and the maximum gate-source voltage is ±20V. Input capacitance (Ciss) is 180pF at 10V, and gate charge (Qg) is 4.9nC at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 540mW at 25°C (Ta). It features logic level gate drive with a 4V drive voltage.
Compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH unaffected status, though these are noted with low confidence due to unverified data. The part is packaged in tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TSMT3 (SC-96) surface mount.
150°C junction temperature.
2A at 25°C ambient.
170mOhm maximum at Id=2A, Vgs=10V.
2.5V maximum at Id=1mA.
4.9nC maximum at Vgs=10V.