| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
824 pcs
|
824 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STH260N6F6-2 is a single N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current of 180A at a case temperature (Tc).
This MOSFET offers a low on-resistance (Rds On) of 2.4mOhm at 60A and 10V gate-source voltage (Vgs). Key electrical characteristics include an input capacitance (Ciss) of 11800 pF at 25V and a gate charge (Qg) of 183 nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage of ±20V.
Packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (H2Pak-2) format, it is designed for surface mounting. The operating temperature range is -55°C to 175°C (TJ), and it has a maximum power dissipation of 300W (Tc).
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (H2PAK-2).
-55°C to 175°C (junction).
180 A at case temperature.
2.4 mOhm at 60 A, 10 V gate-source.
183 nC at 10 V gate-source.
11800 pF at 25 V drain-source.